D40E NJSEMI | Alldatasheet
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i, Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 NPN POWER TRANSISTORS COMPLEMENTARY TO THE D41E SERIES D40E Series 30 - 80 VOLTS
2 AMP, 8 WATTS
D40E series are power transistors designed for various specific and general purpose applica- tions, such as: output and driver stages of amplifiers operati ng at frequencies from DC to greater than 0.1 MH;:; series, shunt and switching regulators; low and high frequency inverters/ converters; and many others. Features:
- High free-air power dissipation
- NPN complement to D41E PNP
- Low collector saturation voltage (0.5V typ. @ 1.0A lc)
- Excellent linearity
- Fast switching CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0360-0410 TYPE TO-202 TERM 1 EMITTER TERM 2 BASE TFBM 3 COUKTCR TAB COLLECTOR maximum ratings (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peakd) Base Current — Continuous Total Power Dissipation @ TA = 25°C @ Tc = 25°C SYMBOL VCEO VCES VEBO ic ICM IB PD Operating and Storage Junction T - Temperature Range • St9 D40E1 1.33 -55 to +1 50 D40E5 1.33 -55 to +150 D40E7 1.33 -55 to +150 UNITS Volts Volts Volts A A Watts thermal characteristics Thermal Resistance, Junction to Ambient R&JA Thermal Resistance, Junction to Case RSJC Maximum Lead Temperature for Soldering _ Purposes: Ve" from Case for 5 Seconds L 15.6 +260 15.6 +260 15.6 +260 °C/W °C/W (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2% Quality Semi-Conductors
electrical Characteristics (Tc = 25° C) (unless otherwise specified) L CHARACTERISTIC SYMBOL MIN TYP MAX UNIT off characteristics*1* Collector-Emitter Sustaining Voltage D40E1 (lc = 10mA) D40E5 D40E7 Collector Cutoff Current (VCE = Rated VCES> Emitter Cutoff Current (VEB = 5V) vCEO(sus) ICES IEBO 0.1 0.1 Volts //A A,A second breakdown Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 1 on characteristics DC Current Gain (lc = 100mA, VCE = 2V) OC = 1A, VCE = 2V) Collector-Emitter Saturation Voltage (IC = 1-OA, IB = 0.1A) Base-Emitter Saturation Voltage (lc = 1.0mA, IB = 0.1 A) hFE hFE VcE(sat) vBE(sat) 1.0 1.3 Volts Volts dynamic characteristics Collector Capacitance (VCB = 10V, f = 1MHz) Current-Gain — Bandwidth Product (lc = 100mA, VCE = 10V) CCBO 230 PF MHz switching characteristics Resistive Load Delay Time + Rise Time Storage Time Fall Time lc = 1A, IB1 = lB2 = 0.1A Vcc = 30V, tp = 25 Msec td + V ts tf 130 400 170 nS (1) Pulse Test PW = 300ms Duty Cycle < 2%. IV IA O.IA PEAK • CURRENT ^xTc^ CURRE NT"^ N V s lOmi PULSED D MAX MAX MAX 'i.- v — ' E EC El MAX. PULS . DUTY V . SK \\N^ | D40E POWER CASE 2 ED OPI CYCLE PULSE DIS ro RAT < • SIP/ w on Omt PULSE - V \\ D4OES — | — , D4OE \\ ^ M 10V VCE 100V 500 100 0.01 — — - vc T ' 1 T T E-2V j- ISC j-25 J—S
- r. 5'C ^^> X V V k ' S FIG. 1 SAFE REGION OF OPERATION O.IO I.O IC-AMPERES FIG. 2 TYPICAL HFE VS lc