D40D NJSEMI | Alldatasheet
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I u if U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN POWER TRANSISTORS . COMPLEMENTARY TO THE D41D SERIES D40D Series TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 30 - 60 VOLTS 1 AMP, 6.25 WATTS D40D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. Features:
- High free-air power dissipation
- NPN complement to D41D PNP
- Low collector saturation voltage (0.5V typ. @ 1.0A lc)
- Excellent linearity
- Fast Switching CASE STYLE TO-202 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) " [0483-CKO) TYPE TO-HS TERM. 1 EMITTER TERM ! BASE TERM. 3 COLLECTOR TAB COLLECTOR maximum ratings (TA = 25°C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current — Continuous Peak!1) Base Current — Continuous Total Power Dissipation @ TA = 25° C @ TC = 25C Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO lc ICM IB PD TJ.Tstg D40D1, 2 1.5 1.67 6.25 -55 to +150 D40D4, 5 1.67 6.25 -55 to +150 D40D7, 8 1.5 1.67 6.25 -55 to +150 UNITS Volts Volts Volts A A Watts thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: '/»" from Case for 5 Seconds R0JA RWC TL +260 +260 +260 °c/w °c/w (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goine to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
electrical Characteristics (Tc = 25° C) (unless otherwise specified) CHARACTERISTIC SYMBOL WIN TYP MAX UNIT off characteristics*1* Collector-Emitter Sustaining Voltage D40D1.2 (lc = 10mA) D40D4, 5 D40D7, 8 Collector Cutoff Current (VCE = Rated VCEO) TC = 25° C (VCE =• Rated VCES) Tc = 1 50° C Emitter Cutoff Current (VEB = 5V) VCEO(sus) 'CES 'EBO 1.0 0.1 0.1 Volts pA //A second breakdown I Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 4 on characteristics DC Current Gain D40D1.4, 7 (lc = 100mA, VCE = 2V) D40D2, 5, 8 D40D1.4, 7 (IC = 1A,VCE = 2V) D40D2 D40D5, 8 Collector-Emitter Saturation Voltage (lc = 500mA. IB = 50mA) D40D1 , 2, 4, 5 D40D7, 8 Base-Emitter Saturation Voltage (lc = 500mA, IB = 50mA) hFE "FE vCE(sat) vBE(sat) 120 — • 150 360 E 0.5 1.0 1.5 Volts Volts dynamic characteristics Collector Capacitance ~ (VCB = 10V, f = 1M|Hz) CBO Current-Gain — Bandwidth Product f (lc = 20mA, VCE = 10V) 'T 200 PF MHz switching characteristics Resistive Load Delay Time + ( = 1A , - , = 0 1A . +{ Rise Time Storage Time _ 3QV ( m ^ ts (1)Pi »DO KK3 fu jlse Test PW = 300ms Duty Cycle < 2%. *00 1 ^"v \\e x > N \\ -A_ . ^ — j -* ~— — • — — : «, ». „> [e-eoiAieron cuM«mT-»* FIG. 1 200 nS Viwc "~~-- B«OOLM. \\ *^ s > s S N \\c- COLLICTM CtMWN^a* FIG. 2