D40C7 CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR D40C7 type is an NPN silicon Darlington power transistor designed for general purpose amplifier applications where high gain is required. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Emitter Voltage V CES 50 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 13 V Continuous Collector Current I C 0.5 A Peak Collector Current I CM 1.0 A Power Dissipation P D 6.25 W Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Thermal Resistance ΘJC 20 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICES V CE=50V 500 nA ICBO V CE=50V, TC=150°C 20 μA IEBO V EB=13V 100 nA BVCEO l C=10mA 50 V VCE(SAT) l C=500mA, IB=0.5mA 1.5 V VBE(SAT) l C=500mA, IB=0.5mA 2.0 V hFE V CE=5.0V, IC=200mA 10K 70K fT V CE=5.0V, lC=20mA 80 MHz Ccb V CB=10V, f=1.0MHz 10 pF ton l C=1.0A, IB1=1.0mA 120 ns t off l C=1.0A, IB1=IB2=1.0mA 1200 ns TO-202 CASE R2 (23-January 2012) www.centralsemi.com
LEAD CODE: 1) Emitter 2) Base 3) Collector Tab is common to pin 3 MARKING: FULL PART NUMBER TO-202 CASE - MECHANICAL OUTLINE www.centralsemi.com R2 (23-January 2012)