D3SBA10 NJSEMI | Alldatasheet

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, ti ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D3SBA10 ~ D3SBA100 PRV: 100-1000 Volts lo : 4.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 4.28 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIER RBV4 0.996 (25.3) 0.972 (24.7) 0.150 (3.8) J L 0.134(3.4)1 T 0.189(4.81^ 0.173(4.4) rj J.043(1.11 0.035 (0.9) 0.303 (7.71 0.287 (7.3) 0.032 (0.8) ^ 0.043(1.1) O.Q75 (1.91 0.060(1.5) 0.114(2,9) 0.098 (2.5) Dimensions in inches and (millimeters) RATING Maximum Reverse Voltage Maximum Average Forward Current (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sinwave, Single Shot ) Current Squared Time at 1ms < t < 10 ms, Tc=25°C Maximum Forward Voltage per Diode at IF = 2,0 A. Maximum DC Reverse Current, VR=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case Maximum Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL VRM Ip(AV) IFSM I2t VF IR Rejc RSJA L TSTG D3SBA10 D3SBA20 D3SBA40 100 200 400 D3SBA60 D3SBA80 D3SBA100 600 800 | 1000 4 (With heatsink, Tc = 108°C) 2.3 (Without heatsink, Ta = 25°C) UNIT V A A A2S

05 I V

5.5 (With heatsink) MA "CM/ 30 (Without heatsink) °C/W 150 °C -40 to +150 °C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conduetors is believed to he both accurate and reliable at the time of going to press. However, NJ Scmi-C'onductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conduetors encourages customers to verify lhat datasheets are current before placing orders. Qualify Semi-Conduetors

RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA100 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 80 90 100 110 120 130 140 150 CASE TEMPERATURE, ( °C) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 2 4 6 10 20 40 60 10 NUMBER OF CYCLES FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FIG.4 - POWER DISSIPATION 0.5 06 0.7 O.B 09 1.0 11 1 FORWARD VOLTAGE, VOLTS POWER DISSIPATION , (W) D KJ-UO100O W J Sin TJ- S e wave 1 50 '( J AVERAGE RECTIFIED CURRENT, (A)