D33D NJSEMI | Alldatasheet
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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon Transistors TELEPHONE: (973) 376-2922 029E9-10 D29E9J1-10J1 D33D29-30 D33D29J1-30J1 The PNP D29E9-10 series and the NPN D33D29-30 series are silicon, planar, passivated, epitaxial transistors intended for general purpose appli- cations. These complementary pairs are especially suited for the drive stage in high power amplifiers, and for control and television circuitry. FEATURES: • Low Collector Saturation Voltage • Excellent Beta Linearity over a Wide Current Range • Heatsinking Available on All Units NOTE: Observe proper polarity on biases for PNP's and NPN's. absolute maximum ratings: (25°C) (unless otherwise specified) Voltages Collector to Emitter VCEO 60 Emmitter to Base VEBO 5 Collector to Base VCBO 70 Collector to Emitter VCKS 70 Current Collector (Continuous) Ic 750 Collector (Pulsed, 300 Msec., pulse width,-2% duty cycle) ICM 1000 Dissipation Volts Volts Volts Volts Total Power (Free Air, T,^25°C)* Total Power with Jl Heatsink (Free Air, TA - 25°C) Total Power with Jl Heatsink (Case Temp., Tc - 25°C) * Temperature Storage Operating Lead soldering (Yi«" ± %a" from case for 10 sec. max.) PT PT PT TL 500 700 1000 -65 to +150 -65 to +150 + 260 *Derate 4.0 mW/°C increase in ambient temperature above 25°C. Derate 5.6 mW/°C increase in ambient temperature above 25°C. *Derate 8.0 mW/°C increase in case temperature above 25"C. electrical characteristics: (25°C) (unless otherwise specified) NOTE: Characteristics apply to both heatsinked and non-heatsinked devices. STATIC CHARACTERISTICS Collector Cutoff Current (vco = 25V) ICES (Vc» = 25V, Ti = 100°C) ICES Forward Current Transfer Ratio (Io = 2mA,Vca = 2V) D29E9/D33D29 hn D29E10/D33D30 h™ (Ic = 500mA, VCE = 2V) D29E9/D33D29 '*kn D29E10/D33D30 hPB Collector Emitter Breakdown Voltage do = 10mA) V(BR>CEO (Ic = 10 fiA) V<BH>CES Emitter Base Breakdown Voltage (II = 10^«A) V<BR)EBO Collector Saturation Voltage do = 500 mA, IB = 50 mA) VCB<SAT> Base Saturation Voltage do = 500 mA, IB = 50 mA) VBE,S4T, DYNAMIC CHARACTERISTICS Output Capacitance, Common Base (VcB = 10V, f = 1MHZ) Ccb Input Capacitance, Common Base (ViB = 0.5V, f = 1 MHz) C.6 Gain Bandwidth Product do = 50 mA, VCE = 2V, f = 20 MHz) D29E9/D33D29 ft D29E10/D33D30 ft "Pulse Conditions: Pulse width < 300/Js Duty cycle < 2% Min. GO 100 Max. 100 120 200 nA ."A 0.75 1.2 120 Volts Volts Volts Volts Volts PF PP MHz