2SB507D SANYO | Alldatasheet
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TEN FOUR LTD.
1535 Alps Road
WAYNE. NEW JERSEY 97470 (ONS S95 2997 TWY 745.992.0703 @ 508 SANYO 28D313,314 2SB507 ,508 Planar Type Silicon Transistor 2SD313,314 For AF Power Amplifier Use .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively. «These are designed for the output stage of 15Wto25W AF power amplifier. +2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care outlines only. () shows the case of 2SB507, 2SB508 only. Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage VCBO (-) 60 Vv Collector to Emitter Voltage VcEO (-) 60 Vv Emitter to Base Voltage VEBO (-)5 v Collector Current Ie (-)3 A icp (-)8 A Collector Dissipation Pc 1.75 wW (To=25°C) 30 w Junction Temperature Tj 150 °c Storage Temperature Tstg -40 to +150 °c - «aa _on0 Electrical Characteristics at Ta=25°C min typ max unit Collector Cut Off Current IcBo VeB=(-) 20V, Ip=0 (-)0.1 mA IcEO Vcp=(-) 60V, RBE=00 (-)5) mA Emitter Cut Off Current IEBO VeB=(-) 4V,Ic=0 (-)l1 mA Secondary Breakdown Voltage Vs/B Ic=(-)0.5A,t=lsec — (-) 60 v DC Current Gain *hpp (1) Ver=(-) 2V,Ic=(-)1A 40* 320* hpE(2) Vew=(-)2V,Ic=(-)0.1A 40 Gain Band Width Product fy Vcg=(~) 5V,Ic=(-)0.5A 8 MHz Output Capacitance cob Vcp=(-) 10V,) 2SB507,508 (130) pF ~ P : (state ) 2sD313, 314 65 pF C-E Saturation Voltage Veg(sat) Ic=(-)2A,Ip=(-)0.2A (-)0.4(-)1.0 V Base to Emitter Voltage VBE Ic=(-) 1A, VcE=(-) 2V (-)1.5 V *hpe(1) is classified by 2v 1A hrg as follows: 40 c 80 [eo pv 120] D 120}100 E 200/160 F 320 Case Outline (unit:mm) 288507 1 40— $8508 RIS.
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