2SD2499 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit in mm e High Voltage : VcBo = 1500 V I85205 03.6403 , 130203 © Low Saturation Voltage : VCE (sat) = 5 V (Max.) iS [4%] | “SEV Fla e High Speed : te = 0.3 ws (Typ.) miele F alc e = Bult-in Damper Type | | - 3 bb qi © — Collector Metal (Fin) is Fully Covered with Mold Resin. ao URSA 2amax Wy 2] 2 o.9smax\\l | 5 MAXIMUM RATINGS (Ta = 25°C) 5.45 5.45 CHARACTERISTIC SYMBOL | RATING | UNIT 8g g Collector-Base Voltage Veso_| 1500 | Vv |] ‘a123 4 Collector-Emitter Voltage VCEO [600 | Vv | a Emitter-Base Voltage a VERO 5 Vv SI coutector Collector Current c | 6 | A 3. EMITTER | Pulse | Icp | 2 | JEDEC _— lay OS Collector Power Dissipation P, w EIAI — (Tc = 25°C) c TOSHIBA _2-16E3A Junction Temperature Weight : 5.5 g (Typ.) Storage Temperature Range —55~150 EQUIVALENT CIRCUIT COLLECTOR BASE ot 40 Q (Typ.)° EMITTER 9610016 4A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [say. | rye. [max.[unrr] Collector Cut-off Current IcBo Vos = 1500 V, In = 0 [— [| —]|[ 1{[ ma] Emitter Cutoff Current Tgpo___|Vup =5V, Ic =0 | 67 | — | 200 | ma | Emitter-Base Breakdown ; npg) [Von = SV, 1g = 1A ap Pe Corrent Gals bre ® Vox = 5V, c= 4A [s{=T | Collector-Emitter Saturation oe vam ferenneos [= [=[#[ Base-Emitter Saturation ce tno fe=enicon [= [ow | Forward Voltage Z (Damper Diode) Ip= 6A | = | 16} 20] V Von = WV y= 0k Collector Output Capacitance Vop=10V, In =0,f=1Mme | — [05 | — | oF | Switching Storage Time Icp =4A,Ipi(end)=08A | — | 75[ 11 | s Time (Fig) [Fall Time fy = 15.75 ke T= Toso] “ 1999-09-02 2/5
TOSHIBA 2$D2499 Fig.1 SWITCHING TIME TEST CIRCUIT Ic IB 2802482 10 eH 100 nF ~ z +e ||TruTlL x a Bt | 45 42 2 IE 1000 3.0 ° al wile [a INPUT 3 mB] oT Ss a gi sls| 25 us en 4S Fs J S “| TT opis i Nn | | = 63.5 ys Vpp vec a i BASE CURRENT 0 a \\/ n Base Current Gradient son cP qp1 + Iba COLLECTOR dig/dt = —BL—-B2 (4 B/ dt tig */*") CURRENT 10% 0 Ne 1999-09-02 3/5
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FS oo oLLITill Hillis” - stititi titi tt TiN | im 10m OL 1 10 100 1000 °o 0 20 40 60 80 100 120 140 = 160 PULSE WIDTH ty (s) CASE TEMPERATURE Te (°C) SAFE OPERATING AREA sfeaas. euisem TEE EPA i So Ig MAX. (PULSED) LIU Nill =f Goxmvous SNC 3 se NSS HT EE 2 3 FF tome PRES TIEN WOT . [SOWIE p lec \\ WC NIM Fe es ee Sel ee C4 fod | ¢ oa} — ATTEN oe SS ao LIME TIMI TI PULSE Te = 25°C N AN 30m] CURVES MUST BE DERATED \\ LINEARLY WITH INCREASE IN _ NY a a Il 3130100 5001000 COLLECTOR-EMITTER VOLTAGE Vcg (V) TTT 4999-09-02 5/5