2SD2374 PANASONIC | Alldatasheet
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2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = 60V , VBE = 0 V CE = 80V , VBE = 0 V CE = 30V , IB = 0 V CE = 60V , IB = 0 V EB = 6V , IC = 0 IC = 30mA, IB = 0 V CE = 4V , IC = 1A V CE = 4V , IC = 3A V CE = 4V , IC = 3A IC = 3A, IB = 0.375A V CE = 10V , IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 50V min typ 0.5 2.5 0.4 max 200 200 300 300 250 1.8 1.2 Unit mA mA mA V V V MHz ms ms ms *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 9.9–0.3 15.0–0.513.7–0.2 4.2–0.2 4.6–0.2 2.9–0.2 0.8–0.1 1.4–0.2 f3.2–0.1 2.6–0.1 0.55–0.15 2.54–0.3 5.08–0.5 3.0–0.5 1.6–0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W 2SD2374 2SD2374A 2SD2374 2SD2374A TC =25°C Ta=25°C 2SD2374 2SD2374A 2SD2374 2SD2374A
Power Transistors 2SD2374, 2SD2374A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) Without heat sink (PC =2W) (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 IB=100mA 10mA 20mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) VCE =4V TC =25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 IC /IB=8 TC =25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =4V TC =25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms 2SD2374 2SD2374A Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Ta=25˚C (2) (1) Without heat sink (2) With a 100 · 80 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)