D2290UK SEME-LAB | Alldatasheet
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Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3890 Issue 3 PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 40V ±20V –65 to 125°C 150°C MECHANICAL DATA To p V i e w D C 4 3 1 2 A I B G H E J K L F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM SOT143 PACKAGE PIN 1 – DRAIN PIN 2 – SOURCE PIN 3 – GATE PIN 4 – SOURCE
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET /G50/G4C/G51 /G50/G44/G5B /G50/G4C/G51 /G50/G44/G5B /G24 /G13/G11/G1B/G1C /G14/G11/G14/G15 /G13/G11/G13/G16/G18 /G13/G11/G13/G17/G17 /G25 /G15/G11/G1B/G13 /G16/G11/G13/G17 /G13/G11/G14/G14/G13 /G13/G11/G14/G15/G13 /G26 /G15/G11/G14/G13 /G15/G11/G19/G17 /G13/G11/G13/G1B/G16 /G13/G11/G14/G13/G17 /G27 /G14/G11/G15/G13 /G14/G11/G17/G13 /G13/G11/G13/G17/G1A /G13/G11/G13/G18/G18 /G28 /G29 /G2A /G13/G11/G1A/G19 /G13/G11/G1C/G17 /G13/G11/G13/G16/G13 /G13/G11/G13/G16/G1A /G2B /G13/G11/G16/G1A /G13/G11/G18/G14 /G13/G11/G13/G14/G18 /G13/G11/G13/G15/G13 /G2C /G13/G11/G13/G18 /G13/G11/G14/G18 /G13/G11/G13/G13/G15 /G13/G11/G13/G13/G19 /G2D /G13/G11/G13/G1C /G13/G11/G14/G1B /G13/G11/G13/G13/G17 /G13/G11/G13/G13/G1A /G2E /G13/G11/G17/G13 /G13/G11/G19/G13 /G13/G11/G13/G14/G19 /G13/G11/G13/G15/G17 /G2F /G27/G4C/G50/G11 /G13/G11/G18/G18/G03/G35/G28/G29 /G13/G11/G13/G1A/G18/G03/G25/G36/G26 /G13/G11/G13/G13/G1B/G03/G25/G36/G26 /G13/G11/G13/G15/G14/G03/G35/G28/G29 /G50/G50 /G2C/G51/G46/G4B/G48/G56 /G14/G11/G1C/G15/G03/G25/G36/G26 /G13/G11/G15/G13/G03/G25/G36/G26
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Document Number 3890 Issue 3 Parameter Test Conditions Min. Typ. Max. Unit Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0 I D = 10mA VDS = 12.5V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.2A PO = 1W VDS = 12.5V I DQ = 50mA f = 1GHz VDS = 0V V GS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 0.5 7 0.18 20:1 R THj–case Thermal Resistance Junction – Case Max. 175 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%