D2282UK SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 40V ±20V 400mA –65 to 125°C 150°C MECHANICAL DATA Dimensions in mm. 6. 7 6. 3 3. 1 2. 9 3. 7 3. 3 7. 3 6. 7 4. 60 2. 30 1. 05 0. 85 0. 80 0. 60 123 13˚ 0. 10 0. 02 0. 32 0. 24 16˚ m ax. 1. 70 m ax. 10˚ m ax. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 6V – 1GHz SINGLE ENDED
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- L O W C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE (Typical < 2dB NF)
- HIGH GAIN – 8dB MINIMUM
- SURFACE MOUNT SOT–223 PIN 1 GATE PIN 2 DRAIN PIN 3 SOURCE PIN 4 DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- VHF/UHF COMMUNICATIONS from DC to 2.5 GHz METAL GATE RF SILICON FET TetraFET
Parameter Test Conditions Min. Typ. Max. Unit 1 5 0.18 10:1 VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 0.2A PO = 750mW VDS = 6V IDQ = 75mA f = 1GHz V DS = 0V VGS = –5V f = 1MHz V DS = 12.5V VGS = 0 f = 1MHz V DS = 12.5V VGS = 0 f = 1MHz V mA µA V mhos dB pF ELECTRICAL CHARA CTERISTICS (Tcase = 25°C unlessotherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance R THj–case Thermal Resistance Junction – Case Max. 70°C / W THERMAL D ATA * Pulse Test:Pulse Duration = 300 µs , Duty Cycle ≤ 2% BV DSS IDSS IGSS VGS(th) gfs G PS η VSWR C iss C oss C rss