D2230UK SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 17.5W 40V ±20V –65 to 150°C 200°C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN – 10 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz METAL GATE RF SILICON FET TetraFET MECHANICAL DATA Dimensions in mm. 3.00 2 PL. 2.07 2 PL. 2 PL. 0.47 0.47 2 PL. 0.10 TYP. 0.381 1.65 2 PL. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 1.27 1.27 0.10 R. TYP. 0.10 TYP. 6.50 ± 0.15 0.3 R. 4 PL. 1.27 0.80 4 PL. 4.90 ± 0.15 0.508 0.360 ± 0.005 2.313 ± 0.2 F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance. Contact Semelab for details.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Parameter Test Conditions Min. Typ. Max. Unit Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain /c104 Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 0.2A PO = 5W VDS = 12.5V IDQ = 0.2A f = 1GHz VDS = 0V VGS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA /c109 A V S dB pF pF pF ELECTRICAL CHARA CTERISTICS (Tcase = 25°C unlessotherwise stated) 0.5 7 0.36 20:1 R THj–case Thermal Resistance Junction – Case Max. 6°C / W THERMAL D ATA * Pulse Test:Pulse Duration = 300 /c109 s , Duty Cycle /c163 2%