2SD2222 PANASONIC | Alldatasheet
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Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 n Features l Optimum for 120W HiFi output l High foward current transfer ratio hFE l Low collector to emitter saturation voltage VCE(sat) n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 160 160 150 3.5 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 160V, IE = 0 V CE = 160V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 5V , IC = 1A V CE = 5V , IC = 7A IC = 7A, IB = 7mA IC = 7A, IB = 7mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 7A, IB1 = 7mA, IB2 = –7mA, V CC = 50V min 160 10000 3500 typ 1.2 max 100 100 100 20000 Unit mA mA mA V V V MHz ms ms ms *hFE2 Rank classification TC =25°C Ta=25°C Rank Q P hFE2 3500 to 10000 7000 to 20000 Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0 B C E
PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 200 160 120 180 140 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3.5W)(1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 6 41 2 81 421 0 6 IB=1.0mA TC =25˚C 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3 100 IC /IB=1000 TC =–25˚C 25˚C 125˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3 100 IC /IB=1000 TC =–25˚C 25˚C 125˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 100.03 30 0.3 3 102 103 104 105 VCE =5V 25˚C –25˚CTC =125˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 102 103 104 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 01 2 10826 4 0.01 0.03 0.1 0.3 100 Pulsed tw =1ms Duty cycle=1% I C /IB=1000 (–IB1=IB2) VCC =50V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C 10ms t=1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 104 103 (1) (2) (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)