D2220UK SEME-LAB | Alldatasheet
Document overview
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Technical content
BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 17.5W 40V ±20V –65 to 150°C 200°C MECHANICAL DATA M N BC A E FG D H K L J P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN – 10 dB MINIMUM SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz Dim. A B C D E F G H J K L M N P mm Tol. Inches Tol. 0.51 Min. 0.020 Min. 1.02 Max. 0.040 Max. 45° Max. 45° Max. 0° Min. 0° Min. 7° Max. 7° Max. 2.18 Max. 0.086 Max. METAL GATE RF SILICON FET TetraFET
Parameter Test Conditions Min. Typ. Max. Unit Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0 I D = 10mA VDS = 12.5V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.2A PO = 5W VDS = 12.5V I DQ = 0.2A f = 1GHz VDS = 0V V GS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 0.5 7 0.36 20:1 R THj–case Thermal Resistance Junction – Case Max. 6°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%