D2218UK SEME-LAB | Alldatasheet

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Technical content

9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 70W 40V ±20V 16A –65 to 150°C 200°C MECHANICAL DATA H E C A B D (2 p l s ) F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz SINGLE ENDED

FEATURES

  • SIMPLIFIED AMPLIFIER DESIGN
  • SUITABLE FOR BROAD BAND APPLICATIONS
  • L O W C rss
  • SIMPLE BIAS CIRCUITS
  • LOW NOISE
  • HIGH GAIN – 10 dB MINIMUM DP PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

  • VHF/UHF COMMUNICATIONS from DC to 1 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 C 45° 5° 45° 5° D 1.52 0.13 0.060 0.005 E 6.35 0.13 0.250 0.005 F 0.13 0.03 0.005 0.001 G 3.56 0.51 0.140 0.020 H 0.64 0.13 0.024 0.005

9/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 0.8A PO = 20W VDS = 12.5V IDQ = 1.6A f = 1GHz VDS = 0 VGS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA /c109 A V S dB pF pF pF ELECTRICAL CHARA CTERISTICS (Tcase = 25°C unlessotherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain /c104 Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 0.5 7 1.44 20:1 HAZARDOUS MA TERIAL W ARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 2.5°C / W THERMAL D ATA * Pulse Test:Pulse Duration = 300 /c109 s , Duty Cycle /c163 2%