D2213UK SEME-LAB | Alldatasheet
Document overview
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Technical content
BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 83W 40V ±20V –65 to 150°C 200°C MECHANICAL DATA F A CB (2 pls) K2 3 E G (4 pls) 5 4 D NMJIH GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- VERY LOW C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN – 10 dB MINIMUM DK PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 6.45 0.13 0.254 0.005 B 1.65R 0.13 0.065R 0.005 C 45° 5° 45° 5° D 16.51 0.76 0.650 0.03 E 6.47 0.13 0.255 0.005 F 18.41 0.13 0.725 0.005 G 1.52 0.13 0.060 0.005 H 4.82 0.25 0.190 0.010 I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005 M 0.13 0.02 0.005 0.001 N 2.16 0.13 0.085 0.005 * Per Side
Parameter Test Conditions Min. Typ. Max. Unit LAB SEM E D2213UK 0.5 7 0.72 20:1 VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 VGS = 20V VDS = 0 ID = 10mA VDS = VGS VDS = 10V ID = 0.8A PO = 20W VDS = 12.5V IDQ = 0.8A f = 1GHz VDS = 0 VGS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARA CTERISTICS (Tcase = 25°C unlessotherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage * gfs Forward Transconductance * G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance HAZARDOUS MA TERIAL W ARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 2.1°C / W THERMAL D ATA * Pulse Test:Pulse Duration = 300 µs , Duty Cycle ≤ 2% TO TAL DEVICE PER SIDE PER SIDE