DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 134W 40V ±20V 16A –65 to 150°C 200°C MECHANICAL DATA F A CB (2 pls) K2 3 E G (4 pls) 5 4 D NMJIH GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 12.5V – 500MHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM DK PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1MHz to 1 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 6.45 0.13 0.254 0.005 B 1.65R 0.13 0.065R 0.005 C4 5 ° 5° 45° 5° D 16.51 0.76 0.650 0.03 E 6.47 0.13 0.255 0.005 F 18.41 0.13 0.725 0.005 G 1.52 0.13 0.060 0.005 H 4.82 0.25 0.190 0.010 I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005 M 0.13 0.02 0.005 0.001 N 2.16 0.13 0.085 0.005 * Per Side
Parameter Test Conditions Min. Typ. Max. Unit V mA µA V S dB pF pF pF 0.5 7 1.44 20:1 PER SIDE LAB SEME D2208UK Document Number 3041 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. VGS = 0 I D = 10mA VDS = 12.5V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 1.6A PO = 40W VDS = 12.5V I DQ = 1.6A f = 500MHz VDS = 0 V GS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage * gfs Forward Transconductance * G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 1.3 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% TOTAL DEVICE PER SIDE