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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 70W 40V ±20V 16A –65 to 150°C 200°C MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 900MHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND
APPLICATIONS
L O W Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VHF/UHF COMMUNICATIONS from DC to 1 GHz METAL GATE RF SILICON FET TetraFET B C A D (2 pls) E F G H I JKM N DT PIN 1 SOURCE (COMMON) PIN 3 SOURCE (COMMON) PIN 5 DRAIN PIN 2 GATE PIN 4 SOURCE (COMMON) DIM mm Tol. Inches Tol. A 6.35 DIA 0.13 0.250 DIA 0.005 B 3.17 DIA 0.13 0.125 DIA 0.005 C 18.41 0.25 0.725 0.010 D 5.46 0.13 0.215 0.005 E 5.21 0.13 0.205 0.005 F 7.62 MAX 0.300 MAX G 21.59 0.38 0.850 0.015 H 3.94 0.13 0.155 0.005 I 12.70 0.13 0.500 0.005 J 0.13 0.03 0.005 0.001 K 24.76 0.13 0.975 0.005 M 2.59 0.13 0.102 0.005 N 4.06 0.25 0.160 0.010
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 I D = 10mA VDS = 12.5V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 1.6A PO = 20W VDS = 12.5V I DQ = 1.6A f = 900MHz VDS = 0 V GS = –5V f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz VDS = 12.5V VGS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 0.5 7 1.44 20:1 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 2.5 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%