D209L NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor D209L
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Switching regulators
- Ultrasonic generators
- High frequency inverters
- General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 700 400 100 150 -55-150 UNIT V V V A W i 1 2 3 PIN 1.BASE 2.COLLECTOR 3. BETTER TO-3PN package uQi DIM A B C D E F G H J K L N q R s u Y mm WIN 19.90 15.38 4.75 0.90 1.90 3.40 2.98 3.20 0.595 19.95 1.98 10.89 4.95 3.35 1.995 5.90 9.90 MAX 20.10 15.42 4.85 1.10 2.10 3.60 3.02 3.40 0.605 20.25 2.02 10.91 5.05 3.45 2.005 'L1L 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and presage dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and-reliable at the time of c?^n to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor D209L
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO IEBO hpEi hp£2 VcE(sat) VBE(sat) fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter Cutoff Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product CONDITIONS lc=10mA;lB=0 lc=1mA; IE=0 VEB= TV; lc=0 lc=5A ; VCE= 5V lc=8A;VCE=5V lc= 5A; IB= 1A IC=8A;IB=1.6A VCE=1 OV,lc=100mA,f=1 MHZ MIN 400 700 TYP. MAX 0.01 1.0 1.2 UNIT V V mA V V MHZ Switching times ts tf Storage Time Fall Time IC=8A,IB1=-IB2=1.6A 3.0 0.7 u s n s