D2089UK SEME-LAB | Alldatasheet
Document overview
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Technical content
DIM Millimetres Tol. Inches Tol. A 25.40 0.25 1.00 0.010 B 45° 5° 45° 5° C 0.76 0.05 0.030 0.002 D 5.21 DIA 0.13 0.205 0.005 E 1.02 0.13 0.040 0.005 F 0.13 0.02 0.005 0.001 G 3.18 0.13 0.125 0.005 H 3.18 REF 0.125 REF PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 65V ±20V –65 to 150°C 200°C MECHANICAL DATA B A C (2 pls) DG (2 pls) H E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- L O W C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN PIN 1 SOURCE PIN 2 GATE PIN 3 SOURCE PIN 4 DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz METAL GATE RF SILICON FET TetraFET
Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 | D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.2A VDS = 28V I DQ = 75mA f = 30MHz P in= 5mW VDS = 0V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V mhos mW pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage gfs Forward Transconductance* Pout Power Output C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 0.18 750 0.5 R THj–case Thermal Resistance Junction – Case Max. 30°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%