D2081UK SEME-LAB | Alldatasheet
Document overview
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Technical content
BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 65V ±20V 200mA –65 to 125°C 150°C MECHANICAL DATA Dimensions in mm. 6. 7 6. 3 3. 1 2. 9 3. 7 3. 3 7. 3 6. 7 4. 60 2. 30 1. 05 0. 85 0. 80 0. 60 123 13˚ 0. 10 0. 02 0. 32 0. 24 16˚ m ax. 1. 70 m ax. 10˚ m ax. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 12V – 1GHz SINGLE ENDED
FEATURES
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- L O W C rss
- SIMPLE BIAS CIRCUITS
- LOW NOISE (Typical < 2dB NF)
- HIGH GAIN – 11dB MINIMUM
- SURFACE MOUNT SOT–223 PIN 1 GATE PIN 2 DRAIN PIN 3 SOURCE PIN 4 DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
- VHF/UHF COMMUNICATIONS from DC to 2.5 GHz METAL GATE RF SILICON FET TetraFET
Parameter Test Conditions Min. Typ. Max. Unit 0.18 10:1 0.5 VGS = 0 | D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.2A PO = 750mW VDS = 12V I DQ = 75mA f = 1GHz VDS = 0V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V mhos dB pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance R THj–case Thermal Resistance Junction – Case Max. 70°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% S Parameters at Vd = 12V, Id = 75mA Freq S11 S12 S21 S22 MHz mag ang mag ang mag ang mag ang 300 0.47 -95 0.04 50 5.20 90 0.32 -90 400 0.46 -120 0.05 80 4.40 76 0.35 -91 500 0.47 -131 0.07 100 3.50 68 0.38 -94 600 0.49 -146 0.10 110 3.00 59 0.43 -98 700 0.51 -156 0.15 110 2.60 51 0.48 -103 800 0.53 -163 0.20 104 2.30 45 0.54 -108 900 0.54 -180 0.25 100 2.10 40 0.58 -112 1000 0.55 178 0.29 96 1.80 36 0.60 -116 1100 0.56 175 0.34 91 1.60 33 0.63 -120 1200 0.57 163 0.40 85 1.40 28 0.65 -126 1300 0.58 150 0.45 80 1.30 26 0.66 -129 1400 0.60 144 0.48 75 1.20 24 0.66 -133 1500 0.60 140 0.52 70 1.10 22 0.66 -135 1600 0.59 130 0.55 66 1.00 21 0.65 -138 1700 0.58 123 0.58 63 0.95 20 0.65 -140 1800 0.56 115 0.60 58 0.90 19 0.64 -142 1900 0.54 110 0.62 54 0.90 20 0.64 -144 2000 0.51 108 0.62 50 0.90 20 0.63 -145
10 010 203 0 405 06 07 08 09 00 P ow er Input (m W ) Power Output (mW) BIAS T1 T2 T3 L2 C7 +12V TYPICAL PERFORMANCE BFM21 at 1GHz Bias Conditions Vd = 12V, Idq = 75mA C1, C7 33pF ATC100B C2, C5, C6 1–8pF C3, C4 1000pF NPO L1 0.1 µH L2 10mm of 1.6mm tcw (half turn) T1 50 Ω microstrip, 11mm long T2 50 Ω microstrip, 15mm long T3 50 Ω microstrip, 5mm long BFM21UK 1GHz Test Circuit