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Power Management & Multimarket SiC Silicon Carbide Diode Final Datasheet Rev. 2.2, 2013-01-15 5th Generation thinQ! TM 650V SiC Schottky Diode IDW20G65C5
1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.2, 2013-01-15
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1) for target applications Breakdown voltage tested at 44 mA 2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 29 nC EC; VR=400V 6.6 µJ IF @ TC < 120°C 20 A Table 2 Pin Definition Pin 1 Pin 2 Pin 3 n.c. C A Type / ordering Code Package Marking Related links IDW20G65C5 PG-TO247-3 D2065C5 www.infineon.com/sic IDW20G65C55th Generation thinQ!™ SiC Schottk y Diode ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 3 CASE
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Table of contents Final Data Sheet 3 Rev. 2.2, 2013-01-15 Table of Contents
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Maximum ratings Final Data Sheet 4 Rev. 2.2, 2013-01-15
2 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Continuous forward current IF – – 20 A TC < 120°C, D=1 Surge non-repetitive forward current, sine halfwave IF,SM – – 103 TC = 25°C, tp=10 ms – – 87 TC = 150°C, tp=10 ms Non-repetitive peak forward current IF,max – – 776 TC = 25°C, tp=10 µs i²t value ∫ i²dt – – 53 A²s TC = 25°C, tp=10 ms – – 38 TC = 150°C, tp=10 ms Repetitive peak reverse voltage VRRM – – 650 V Diode dv/dt ruggedness dv/dt – – 100 V/ns VR=0..480 V Power dissipation Ptot – – 112 W TC = 25°C Operating and storage temperature Tj;Tstg -55 – 175 °C Mounting torque – – 60 Ncm M3 and M3.5 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-247-3 Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case RthJC – 1.0 1.3 K/W Thermal resistance, junction- ambient RthJA – – 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold – – 260 °C 1.6mm (0.063 in.) from case for 10 s
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5
Electrical characteristics
Final Data Sheet 5 Rev. 2.2, 2013-01-15
4 Electrical characteristics
Table 5 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. DC blocking voltage VDC 650 – – V IR= 0.21 mA, Tj = 25°C Diode forward voltage VF – 1.5 1.7 IF= 20 A, Tj=25°C – 1.8 2.1 IF= 20 A, Tj=150°C Reverse current IR – 1.1 210 µA VR=650 V, Tj=25°C – 0.3 75 VR=600 V, Tj=25°C – 4.1 1450 VR=650 V, Tj=150°C Table 6 AC characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Total capacitive charge Qc – 29 nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. Total Capacitance C – 590 – pF VR=1 V, f=1 MHz – 76 – VR=300 V, f=1 MHz – 74 – VR=600 V, f=1 MHz
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Electrical characteristics diagrams Final Data Sheet 6 Rev. 2.2, 2013-01-15
5 Electrical characteristics diagrams
Power dissipation Diode forward current 100 120 25 50 75 100 125 150 175 Ptot[W] TC[°C] 100 120 140 160 25 50 75 100 125 150 175 IF[A] TC[°C] 0.1 0.3 0.5 0.7 Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Table 8 Typical forward characteristics Typical forward characteristics in surge current 0123 IF [A] VF [V] 100 120 140 160 180 200 0123456 IF [A] VF [V] IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj -55°C 175°C 150°C 25°C 100°C -55°C 175°C 150°C 25°C 100°C
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.2, 2013-01-15 Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage 100 300 500 700 900 QC[nC] dIF/dt [A/µs] 1.E-9 1.E-8 1.E-7 1.E-6 1.E-5 1.E-4 100 200 300 400 500 600 IR [A] VR [V] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 0.01 0.1 Zth,jc [K/W] tp [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 100 200 300 400 500 600 700 800 0 1 10 100 1000 C [pF] VR [V] Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz -55°C 175°C 150°C 25°C 100°C
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.2, 2013-01-15 Table 11 Typ. capacitance stored energy 0 200 400 600 EC [µJ] VR [V] EC=f(VR)
6 Simplified Forward Characteristics Model
Equivalent forward current curve Mathematical Equation IF [A] VF [V] VF=f(IF) Tj in °C; -55°C < Tj < 175°C; IF < 40 A 1/Rdiff Vth 0.023106.4106.4 V 04.1001.0 5-27- jjjDIFF jjTH TTTR TTV FDIFFTHF IRVV
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5 Package outlines Final Data Sheet 9 Rev. 2.2, 2013-01-15
7 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
5 th Generation thinQ!TM SiC Schottky Diode IDW20G65C5
Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2013-01-15 Published by Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a gua rantee of conditions or characteristics. With respect to any examples or hints given herein, any typical val ues stated herein and/or any information regarding the applicatio n of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limit ation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aeros pace device or system or to affect the safety or effectiveness of that device or system. Life support devices or syste ms are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.2, 2013-01-15
8 Revision History
5th Generation thinQ!TM SiC Schottky Diode Revision History: 2013-01-15, Rev. 2.2 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of the final datasheet. 2.1 Reverse current values, maximum diode forward voltage.
2.2 Reverse current values, tested avalan che current, simplified calculation model
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