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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN)
FEATURES
z Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50µA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=50µA, IC=0 5 V Collector cut-off current ICBO V CB=60V, IE=0 10 µA Emitter cut-off current IEBO V EB=4V, IC=0 10 µA DC current gain hFE V CE=5V, IC=0.5A 100 320 Collector-emitter saturation voltage VCE(sat) I C=2A, IB=0.2A 1 V Base-emitter saturation voltage VBE(sat) I C=2A, IB=0.2A 1.5 V Transition frequency fT V CE=5V, IC=0.5A, f=5MHz 8 MHz Collector output capacitance Cob V CB=10V, IE=0, f=1MHz 70 pF TO-220F 1. BASE 2. COLLECTOR 3. EMITTER
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