D2053UK SEME-LAB | Alldatasheet
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Prelim. 9/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 15W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA /G41 /G46 /G45 /G42 /G44 /G43 /G47 /G48 /G49 /G50 /G4D /G4E /G4F /G4A /G4B /G4C /G31 /G32 /G33 /G34 /G35 /G36 /G37 /G38 /G51 /G52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET * Per Side PIN 1 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 4 Source (Common) PIN 5 Source (Common) PIN 6 Gate 2 PIN 7 Gate 1 PIN 8 Source (Common) DIM mm Tol. Inches Tol. A 6.47 0.08 .255 .003 B 0.76 0.08 .030 .003 C 45° 5° 45 ° 5° D 0.76 0.08 .030 .003 E 1.14 0.08 .045 .003 F 2.67 0.08 .105 .003 G 11.73 0.13 .462 .005 H 8.43 0.08 .332 .003 I 7.92 0.08 .312 .003 J 0.20 0.02 .008 .001 K 0.64 0.02 .025 .001 L 0.30 0.02 .012 .001 M 3.25 0.08 .128 .003 N 2.11 0.08 .083 .003 O 6.35SQ 0.08 .250SQ .003 P 1.65 0.51 .065 .020 Q 0.13 max .005 max R 0.25 0.07 0.010 .003
Prelim. 9/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit 0.18 20:1 0.5 VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.2A PO = 5W VDS = 28V I DQ = 0.2A f = 1GHz VDS = 28V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA /G6D A V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance R THj–case Thermal Resistance Junction – Case Max. 12°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 /G6D s , Duty Cycle /GA3 2% TOTAL DEVICE PER SIDE PER SIDE BV DSS IDSS IGSS VGS(th) gfs G PS /G68 VSWR C iss C oss C rss