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Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 29W 65V ±20V –65 to 150°C 200°C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED

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 SIMPLIFIED AMPLIFIER DESIGN  SUITABLE FOR BROAD BAND

APPLICATIONS

 VERY LOW C rss  SIMPLE BIAS CIRCUITS  LOW NOISE  HIGH GAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)  HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET MECHANICAL DATA Dimensions in mm. M N BC A E FG D H K L J P SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE Dim. A B C D E F G H J K L M N P mm Tol. Inches Tol. 0.51 Min. 0.020 Min. 1.02 Max. 0.040 Max. 45° Max. 45 ° Max. 0° Min. 0 ° Min. 7° Max. 7 ° Max. 2.18 Max. 0.086 Max.

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Parameter Test Conditions Min. Typ. Max. Unit Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.8A PO = 10W VDS = 28V I DQ = 0.4A f = 1GHz VDS = 0V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) 0.72 20:1 R THj–case Thermal Resistance Junction – Case Max. 6 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%