D2022UK SEME-LAB | Alldatasheet
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Technical content
Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage T emperature Tj Maximum Operating Junction T emperature 125W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA C A ON MK J I H G F E D B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 25W 28V 500MHz PUSHPULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN 13 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz METAL GATE RF SILICON FET T etraFET DIM mm Tol. Inches Tol. A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C 45° 5° 45° 5° D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 F 14.22 0.13 0.560 0.005 G 1.27 x 45° 0.13 0.05 x 45° 0.005 H 1.52 0.13 0.060 0.005 I 6.35 0.13 0.250 0.005 J 0.13 0.02 0.005 0.001 K 2.16 0.13 0.085 0.005 M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 DQ PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 * Per Side
Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter T est Conditions Min. Typ. Max. Unit 0.9 20:1 2.5 VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V ID = 1A PO = 25W VDS = 28V I DQ = 0.5A f = 500MHz VDS = 28V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA mA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 1.4°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £2% TOTAL DEVICE PER SIDE PER SIDE BV DSS IDSS IGSS VGS(th) gfs G PS h VSWR C iss C oss C rss