D2022UK SAMES | Alldatasheet
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Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BVDSS Drain – Source Breakdown Voltage * BVGSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 125W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA C A ON MK J I H G F E D B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C 45° 5° 45° 5° D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 F 14.22 0.13 0.560 0.005 G 1.27 x 45° 0.13 0.05 x 45° 0.005 H 1.52 0.13 0.060 0.005 I 6.35 0.13 0.250 0.005 J 0.13 0.02 0.005 0.001 K 2.16 0.13 0.085 0.005 M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 DQ PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 * Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit 0.9 20:1 2.5 VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 1A PO = 45W VDS = 28V I DQ = 0.5A f = 500MHz VDS = 28V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA μA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 1.4°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2% TOTAL DEVICE PER SIDE PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS η VSWR Ciss Coss Crss