D2013UK SEME-LAB | Alldatasheet

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Prelim.12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 83W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA F A CB (2 pls) K2 3 E G (4 pls) 5 4 D NMJIH GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz PUSH–PULL

FEATURES

 SIMPLIFIED AMPLIFIER DESIGN  SUITABLE FOR BROAD BAND APPLICATIONS  VERY LOW C rss  SIMPLE BIAS CIRCUITS  LOW NOISE  HIGH GAIN – 10 dB MINIMUM DK PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

APPLICATIONS

 HF/VHF/UHF COMMUNICATIONS from 1MHz to 2 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 6.45 0.13 0.254 0.005 B 1.65R 0.13 0.065R 0.005 C4 5 ° 5° 45° 5° D 16.51 0.76 0.650 0.03 E 6.47 0.13 0.255 0.005 F 18.41 0.13 0.725 0.005 G 1.52 0.13 0.060 0.005 H 4.82 0.25 0.190 0.010 I 24.76 0.13 0.975 0.005 J 1.52 0.13 0.060 0.005 K 0.81R 0.13 0.032R 0.005 M 0.13 0.02 0.005 0.001 N 2.16 0.13 0.085 0.005 * Per Side

Parameter Test Conditions Min. Typ. Max. Unit D2013UK Prelim.12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. 0.72 20:1 VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 0.8A PO = 20W VDS = 28V I DQ = 0.8A f = 1GHz VDS = 0 V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA /G6D A V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage * gfs Forward Transconductance * G PS Common Source Power Gain /G68 Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 2.1 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 /G6D s , Duty Cycle /GA3 2% TOTAL DEVICE PER SIDE PER SIDE

Prelim.12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. /G54/G32 /G54/G31 /G39 /G4C/G31 /G4C/G33 /G31/G30 /G30/G6E /G46 /G31 /G6E /G46 /G31/G4B /G32 /G31 /G4B /G32 /G31/G4B /G32 /G33/G36 /G70 /G46 /G33/G36 /G70 /G46 /G31/G2D /G38/G70 /G46 /G31/G30 /G70 /G46 /G32/G2E /G32/G70 /G46 /G31/G2D /G38/G70 /G46 /G31/G30 /G31/G6E /G46 /G31/G30 /G30/G6E /G46 /G33/G36 /G70 /G46 /G33/G36 /G70 /G46 /G38/G2E /G32/G70 /G46 /G33 /G2E /G36 /G70 /G46 /G31/G2D /G38/G70 /G46 /G44 /G32 /G30/G31 /G33/G55 /G4B /G44 /G32 /G30/G31 /G33/G55 /G4B /G4C/G32 /G31/G30 /G30/G75 /G46 /G54/G31 /G47 /G61 /G74/G65 /G2D/G42 /G69 /G61 /G73 /G2B /G32/G38/G56 /G54/G33 /G54/G34 /G54/G35 /G54/G36 /G54/G37 /G54/G38 /G54/G39 /G54/G31 /G31 /G54 /G31 /G32 /G54/G31 /G33 /G54 /G31 /G34 /G54/G31 /G35 /G54 /G31 /G36 /G54/G31 /G37 /G54 /G31 /G38 /G54/G31 /G30 1000MHz Test Fixture Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 23mm T2, T19 50MM 50 Ohm UT34 semi-rigid coax T3, T7 6mm T4, T8 8mm T5, T9 15mm T6, T10 9mm T11, T15 8mm T12, T16 7mm T13, T17 11mm T14, T18 5mm L1, L2 6 turns of 24swg enamelld copper wire, 3mm i,d. L3 1.5 turn 24 swg enamelled copper wire on Siemens B62152-A7x 2 hole core