D2003UK SEME-LAB | Alldatasheet
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Prelim.01/01Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage * BV GSS Gate – Source Breakdown Voltage * ID(sat) Drain Current * Tstg Storage Temperature Tj Maximum Operating Junction Temperature 35W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA C A ONM K J I H G F E D B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW C rss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C4 5 ° 5° 45° 5° D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 F 14.22 0.13 0.560 0.005 G 1.27 x 45 ° 0.13 0.05 x 45° 0.005 H 1.52 0.13 0.060 0.005 I 6.35 0.13 0.250 0.005 J 0.13 0.02 0.005 0.001 K 2.16 0.13 0.085 0.005 M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 DQ PIN 1 SOURCE (COMMON) PIN 3 DRAIN 2 PIN 5 GATE 1 PIN 2 DRAIN 1 PIN 4 GATE 2 * Per Side
Prelim.01/01Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit 0.18 20:1 0.5 VGS = 0 I D = 10mA VDS = 28V V GS = 0 VGS = 20V V DS = 0 ID = 10mA V DS = VGS VDS = 10V I D = 1A PO = 5W VDS = 28V I DQ = 0.2A f = 1GHz VDS = 28V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA /G6D A V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 5.0 °C / W THERMAL DATA * Pulse Test: Pulse Duration = 300 /G6D s , Duty Cycle /GA3 2% TOTAL DEVICE PER SIDE PER SIDE BV DSS IDSS IGSS VGS(th) gfs G PS /G68 VSWR C iss C oss C rss
Prelim.01/01Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. /G54/G32 /G31/G30/G30/G6E/G46 /G31/G6E/G46 /G31/G4B /G32 /G44/G32 /G30 /G30 /G33 /G55 /G4B /G4C/G33 /G31/G30 /G31/G30/G30/G75/G46 /G31/G2D /G31/G30/G70/G46 /G33/G30/G70/G46 /G33/G30/G70/G46 /G33/G2E /G36/G70/G46 /G39/G2E /G31/G70/G46 /G44 /G32 /G30/G30 /G33/G55 /G4B /G33/G2E /G36/G70/G46 /G31/G2D /G31/G30/G70/G46 /G36/G2E /G38/G4B /G31/G30/G6E/G46 /G33/G30/G70/G46 /G33/G30/G70/G46 /G54/G31 /G37 /G31/G2D /G31/G30/G70/G46 /G31/G4B /G32 /G31/G4B /G32 /G4C/G32 /G4C/G31 /G54/G31 /G54/G33 /G54/G34 /G54/G36 /G54/G37 /G54/G38 /G54/G39 /G54/G31 /G30 /G47/G61 /G74 /G65 /G2D /G42 /G69 /G61 /G73 /G54/G35 /G2B/G32 /G38 /G56 /G54/G31 /G31 /G54 /G31 /G33 /G54/G31 /G36 /G54/G31 /G32 /G54/G31 /G35 /G54/G31 /G34 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 15.7 T2, T17 45mm 50 OHM UT 34 semi-rigid coax T3, T7 7mm T4, T8 15mm T5, T9 7.6mm T6, T10 8mm T11,T14 8mm T12,T15 11.2mm T13,T16 7mm L1, L2 6 turns 24swg enamelled copper wire, 3mm i.d. L3 1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X 2 hole core