D2002UK SEME-LAB | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Prelim. 12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 29W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA GKM J I E D (2 pls) C N (typ) A B F (2 pls) H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS L O WC rss SIMPLE BIAS CIRCUITS LOW NOISE H I G HG A I N–1 3d BM I N I M U M DP PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS f r o mD Ct o2G H z METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 C 45° 5° 45° 5° D 3.30 0.13 0.130 0.005 E 18.92 0.08 0.745 0.003 F 1.52 0.13 0.060 0.005 G 2.16 0.13 0.085 0.005 H 14.22 0.08 0.560 0.003 I 1.52 0.13 0.060 0.005 J 6.35 0.13 0.250 0.005 K 0.13 0.03 0.005 0.001 M 5.08 0.51 0.200 0.020 N 1.27 x 45° 0.13 0.050 x 45° 0.005
Prelim. 12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VGS =0 I D = 10mA VDS = 28V V GS =0 VGS = 20V V DS =0 ID = 10mA V DS =V GS VDS = 10V I D = 0.4A PO =5 W VDS = 28V I DQ = 0.2A f = 1GHz VDS =0 V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 0.36 20:1 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 6.0°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300µs , Duty Cycle≤ 2%