D2001UK SEME-LAB | Alldatasheet
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Prelim. 12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. PD Power Dissipation BV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage ID(sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature 17.5W 65V ±20V –65 to 150°C 200°C MECHANICAL DATA GKM J I E D (2 pls) C N (typ) A B F (2 pls) H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS L O WC rss SIMPLE BIAS CIRCUITS LOW NOISE H I G HG A I N–1 3d BM I N I M U M DP PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS from 50 MHz to 2 GHz METAL GATE RF SILICON FET TetraFET DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 C 45° 5° 45° 5° D 3.30 0.13 0.130 0.005 E 18.92 0.08 0.745 0.003 F 1.52 0.13 0.060 0.005 G 2.16 0.13 0.085 0.005 H 14.22 0.08 0.560 0.003 I 1.52 0.13 0.060 0.005 J 6.35 0.13 0.250 0.005 K 0.13 0.03 0.005 0.001 M 5.08 0.51 0.200 0.020 N 1.27 x 45° 0.13 0.050 x 45° 0.005
Prelim. 12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VGS =0 I D = 10mA VDS = 28V V GS =0 VGS = 20V V DS =0 ID = 10mA V DS =V GS VDS = 10V I D = 0.2A PO = 2.5W VDS = 28V I DQ = 0.1A f = 1GHz VDS = 28V V GS = –5V f = 1MHz VDS = 28V V GS = 0 f = 1MHz VDS = 28V V GS = 0 f = 1MHz V mA µA V S dB pF pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Drain–SourceBV DSS Breakdown Voltage Zero Gate VoltageIDSS Drain Current IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* G PS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance 0.18 20:1 0.5 HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. R THj–case Thermal Resistance Junction – Case Max. 10°C / W THERMAL DATA * Pulse Test: Pulse Duration = 300µs , Duty Cycle≤ 2%
Prelim. 12/00Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. /G44 /G32 /G30/G30 /G31/G55 /G4B /G33/G2E /G33/G4B /G4C/G31 /G4C/G31 /G4C/G31 /G4C/G32 /G33/G30 /G70 /G46 /G32/G32 /G31/G30 /G4B /G31/G30 /G30/G6E /G46 /G31/G30 /G70 /G46 /G33/G30 /G70 /G46 /G31/G30 /G30/G75 /G46 /G31/G30 /G30/G6E /G46 /G31/G2D /G31/G30 /G70 /G46 /G30/G2E /G38/G2D /G31 /G30 /G70 /G46 /G47 /G61 /G74/G65 /G2D/G42 /G69 /G61 /G73 /G2B /G32/G38/G56 /G54/G31 /G54 /G32 /G54/G33 /G54 /G34 /G54/G35 /G54/G36 /G36/G20 /G78/G20 /G33 /G20 /G6D /G6D /G63/G6F/G6E/G74 /G61 /G63 /G74 /G20/G70 /G61 /G64 /G36/G20 /G78/G20 /G33 /G6D /G6D /G20 /G63/G6F/G6E/G74 /G61 /G63 /G74 /G20 /G70/G61 /G64 D2001UK 1GHz TEST FIXTURE Substrate 0.8mm PTFE/glass, Er = 2.5 All microstrip lines W = 2.4mm T1 35 mm T2, T5 15 mm T3 3 mm T4 4 mm T6 32 mm L1 7 turns 24swg enamelled copper wire, 3mm i.d. L2 1.5 turns 24swg enamelled copper wire on ferrite core