2SD1985 PANASONIC | Alldatasheet
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2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A n Features l High forward current transfer ratio hFE which has satisfactory linearity l Low collector to emitter saturation voltage VCE(sat) l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 150 –55 to +150 Unit V V V A A W 2SD1985 2SD1985A 2SD1985 2SD1985A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = 60V , IB = 0 V CE = 80V , IB = 0 V CE = 30V , IB = 0 V CE = 60V , IB = 0 V EB = 6V , IC = 0 IC = 30mA, IB = 0 V CE = 4V , IC = 1A V CE = 4V , IC = 3A V CE = 4V , IC = 3A IC = 3A, IB = 0.375A V CE = 5V , IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 50V min typ 0.5 2.5 0.4 max 200 200 300 300 250 1.8 1.2 Unit mA mA mA V V V MHz ms ms ms 2SD1985 2SD1985A 2SD1985 2SD1985A 2SD1985 2SD1985A *hFE1 Rank classification Rank Q P hFE1 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
Power Transistors 2SD1985, 2SD1985A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C IB=100mA 90mA 80mA 70mA 60mA 40mA 30mA 20mA 10mA 50mA Collector to emitter voltage VCE (V) Collector current IC (A) TC =100˚C 25˚C –25˚C VCE =4V Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=8 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =5V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 10ms t=1ms DC 2SD1985 2SD1985A ICP IC Non repetitive pulse TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)