2SD1876 SANYO | Alldatasheet
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Technical content
Features
+ High speed (tp=100ns ) . high breakdown voltage (Vego= 15000) + High reliability (adoption of HVP process) . On-chip damper diode Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vepo 1500 Vv Collector-to-Emitter Voltage Vor 800 Vv Emitter-to-Base Voltage VeBo 6 v Collector Current Ig 3 A Peak Collector Current top 12 A Collector Dissipation Po 50 W Junction Temperature Tj 150 °C Storage Temperature Tstg ~55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current logs Vog=1500V 1.0 mA Topo Vop=800V 10 pA Collector Sustain Voltage Voro(sus) Ig=100mA,I,=0 800 Vv Emitter Cutoff Current Iepo Vgpeh¥ 40 1300 mA C-E Saturation Voltage Vor(sat) Ip=2A,Ip=0.6A 5 v B~E Saturation Voltage Var(sat) Tg=2A,1g=0.6A 4.5 Vv DC Current Gain bpp Vope5V,1¢=0.5A 8 hero Vop=5V,Ic=2A 3 6 ; Diode Forward Voltage Vp Tpc=3A 2.0 v Fall Time te Ic¢=3A,1p4=0.8A, 0.1 0.3 ps Tgoe-1.6A Switching Time Package Dimensions 2039 Test Circuit (unit: mm) output a0 22.0. 20.4 —— iat eel ° bs Le LL ra” best Ovo =v Cc: Collector PW=20ps,dutyS1% 3 _ 8: Base Unit (resistance:@, capacitance:F) |,” 06 SANYO:'T03PHL SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 2207TA,TS Ne 2423-1/3
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2 Reverse Bias AS 0 + Pc - Ta
« peu TTT TT] =i i] ett ty a PCIE FH bot | gt IN | aa a, Co ET & aa rt Pb — g | s-sise. 1] TTT TT . On. a | Be.sa0 CPCI ey an S,['Peonstant | TT TTT TTT) Be iN ke Ng sSigere pulse ne 90 Ce a a __Collector-to- Emitter Voltage, Vop - Vi Ambient Temperature, Ta '- °C’. a : Tease og = Vi Ambient Temperature,ta'= °C’ Ne 2423-2/3
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shalt: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and al! their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. . Ne 2423-3/3