2SD1710C SANYO | Alldatasheet

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Technical content

Features

  • High breakdown voltage, high reliability.
  • Fast switching speed.
  • Wide ASO.
  • Adoption of MBIT process.
  • Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 900 V Collector-to-Emitter Voltage V CEO 500 V Emitter-to-Base Voltage V EBO 7V Collector Current I C 7A Collector Current (Pulse) I CP PW≤300μs, duty cycle≤10% 14 A Base Current I B 3A Collector Dissipation P C Tc=25°C4 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=500V, IE=0A 10 μA Emitter Cutoff Current I EBO VEB=5V, IC=0A 10 μA Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608KC TI IM TA-3441 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SD1710C NPN Triple Diffused Planar Silicon Transistor 500V / 7A Switching Regulator Applications

No. 7200-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE1V CE=5V, IC=0.6A 20 50 hFE2V CE=5V, IC=3A 8 Gain-Bandwidth Product f T VCE=10V, IC=0.6A 18 MHz Output Capacitance Cob V CB=10V, f=1MHz 80 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=3A, IB=0.6A 1 V Base-to-Emitter Saturation Voltage V BE(sat) I C=3A, IB=0.6A 1.5 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=1mA, IE=0A 900 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=5mA, RBE=∞ 500 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC=0A 7 V Collector-to-Emitter Sustain Voltage V CEX(sus) I C=2.5A, IB1=--IB2=1A, L=1mH, Clamped 500 V Turn-ON Time t on VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 0.5 μs Storage Time t stg VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 3.0 μs Fall Time t f VCC=200V, 5IB1=--2.5IB2=IC=4A, RL=50Ω 0.3 μs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7502-002 16.0 5.6 3.1 2.0 2.0 123 2.8 2.0 5.45 5.45 22.020.41.0 0.6 4.0 21.0 5.0 8.03.5 3.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML VR RB VCC=200VVBE= --5V + + 50Ω INPUT OUTPUT 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 RL=50Ω IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IT03804 IT03805 26 48 1 0 IB=0mA20mA 50mA 100mA 200mA 400mA 600mA 800mA 1.0A 1.2A Ta=120 --40 VCE=5V

No. 7200-3/4 100 23 5 7 100010 23 5 7 1.0 0.1 1.00.1 23 5 5 72 3 7 PC -- Tc IT03813 0 20 40 60 80 100 120 140 150 160 Rth(t) -- t IT03812 IT03810 Forward Bias A S O 57 10 23 5 7 23 5 7 100 1000 1.0 0.1 0.1 1.023 5 1023 5 10023 5 100023 5 IT03809 0.1 SW Time -- IC 1.0 23 5 7 0.1 23 5 7 1.0 23 5 7 10 IT03808 VBE(sat) -- IC 1.0 0.1 1.0 IT03811 Reverse Bias A S O 100 μs 1ms10ms PC=45WDC Operation ICP=14A <50μs IC=7A Tc=25°C Single pulse Ta= --40°C 120°C 25°C IC / IB=5 tstg ton tf IB1 IB2 VCC=20V--5V L VR Test Circuit TUT IC IB2= --1.0A L=200μH Tc=25°C Tc=25°C Case Temperature, Tc -- °C Collector Dissipation, PC -- W Time, t -- ms Transient Thermal Resistance, Rth(t) -- °C / W Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A Switching Time, SW Time -- s Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V 23 5 7 0.1 23 5 7 1.0 23 5 7 10 IT03806 IT03807 hFE -- IC 0.123 5 7 23 5 7 23 5 7 1.0 10 100 VCE(sat) -- IC 0.1 1.0 Ta=120°C 25°C --40°°C VCE=5V IC / IB=5 120 Ta= --40 Ta= --40°C 120°C 25°C Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V

No. 7200-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.