D1682

2SB1142 SANYO | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Adoption of FBET, MBIT processes. - Low saturation voltage. . Large current capacity and Wide ASO. (| ):28B1142 Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso (-)60 Vv Collector-to-Emitter Voltage Vcro (-)50 v Emitter-to-Base Voltage VEBO (-)6 Vv Collector Current Ic (-)2.5 A Collector Current (Pulse) Top (-)5.0 A Collector Dissipation Po 15 WwW Te=25°C 10 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icpo Vop=(—)50V, Ig=0 (-)100 nA Emitter Cutoff Current Igo Vep=(—)4V,Ic=0 (-)100 nA DC Current Gain hpgQ1) = Vog=(-)2V,Ig=(—)100mA = (100)3K (400) 100« 560 hpg(2)) Vog=(-)2V,Ig=(—)2A 35 Gain-Bandwidth Product fy Vog=(—)10V, Io¢=(—)50mA 140 MHz C-E Saturation Voltage Vora) I¢=(-)1A, Ig =(—)50mA. (—250)(-500) mV 110 300 mV B-E Saturation Voltage Vpxat) I¢=(—)1A, Ip=(-)50mA (-)0.85 (-)1.2 Vv Output Capacitance Cob Vor=(—)10V, f=1MHz (25)16 pF Continued on next page. % : The 2SB1142/2SD1682 are classified by 100mA hpg as follows 2sB1142 200 _T_400 2SD1682 | 100 R 200 140 S$ 280 200 T 400 280 U 560 Package Dimensions 2042A (unit : mm) 11.0 15.5 ww f 255 ; a} 2 a 3 re) bP ——— i oF 0) at 2 as 3 ja: er C: Collector S| E: Emitter SANYO: TO126ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN. - D151MH, (KOTO) No.2060-1/4

2$B1142/2SD1682 eS Continued from preceding page. min typ max unit C-B Breakdown Voltage Visrcpo = I= (—)10zA, Ip=0 (—)60 Vv C-E Breakdown Voltage Veeryceo Ic=(—)1mA, Rgg= © (—)50 v E-B Breakdown Voltage Visneso Ip=(—)10uA,Ic=0 (-)6 Vv Turn-on Time ton See specified Test Circuit. (35)35 ns Storage Time tstg a (350)550 ns Fall Time te ” (30)30 ns Switching Time Test Circuit Buyer, Se output INPUT Re (fF ° ny pe 50 wR a a “$0 Ig=10Igl = -1012=1A : (For PNP, the polarity is reversed). Unit Resistance : 0, Capacitance : F) 20) Ic = Nee > 2055 Ic = Nee —— 28B1142 SS pom to SS eS > SA =——en 4 fam EFF | y/o ee 8 | fp | Sop Poa | ama BLATT | ims Tg eee tt t/a O/T | // oe | 7 Foe Pee = > = = Br 7. x ° Collector to Emitter Voltage, Vox fy” Collector-to-Emitter Voltage, Vog — V Ic - Vee Ic = Vee Tee GS Ce EPSe pease epee tet TTT) 2 {feral ald ac |_| eT 2 ff aa sm

2 Uae [awe | TT) eee EE ||

E ro 1 5 (Wet tt ama Lie Yee e sri tT | tal PT] 8 ee a= ee <a “Ped “FES =n °% 74 mm “16 “2 °% 4 8 . 12 6 20 Collector-toEmitter Voltage, Vcp — V Collector-to-Emitter Voltage, Veg — V eee No.2060-2/4

2$B1142/2SD1682 Ic - Vee Ic _- Vee Vor= ~2V al Voe=2V 4 t [| q EC O BasetoBmitter Voltage, Var - V : Baseto Emitter Voltage, Ves - V hee - Ic hee - Ic iad ‘00 [| 2sbiee2 oe Se =e iad ee £ ae 2 eee eo es Ne ccc PN 5 || Bd i i” Wr : FECES pu ee Collector Current, Ig — A Collector Current, Io — A - fr = Ic 0 Cob - Vee » TL TT TLE] Beitersoreee {i TTPO wie ey Lt | z ee re [RSS| eS eeed TT E <a gl] ane PF Za tp kta SL PPS RES PH sees eqp tO eee oon Collector Current, Ig — A ° ° Collector-to-Base Voltage, Von ~ V cn Toco Sooo ops | 2S8B1142 1) > HH EEE ei > SEH ee stone] ee = JP Per Ty & TT TTT g§ DOC es —=g ee eee 4,5 g | ¢ ES eee ae oo aaa ii Poa ce a2 Deere Oe tee eo Sa JR Taro Sa of Sr TT

0 Collector Current, ly A Dor i i,

0 Vag(sat). ~ Ic Vbe(at) tt Ie dt ETT TT sre “TTT ee S Toflp=20 Io/lp=20

7 TTT [it ae |

ali! HT TT aiE TTT TT 8 & a a 5 iH ST iti TIT TT) st & § 3 2 = 25" Sol | tas 280 Rin 83 al Tox ~28¢ Baie 27" 25°C [1 350 == 6s +O eer | OF a eee es : pe sede eect! TTT TT se {erenect [TI eli TT eo “Toor LETT “0.01 0) 10 001 O. 1a Collector Current, lg — A Collector Current, Ig ~ A ° ASO a Po - Ta Hep J 2$B1142/2SD1682 aa 28B1142/2SD1682 Peo ee

74 Nore ax 4 e PINE

4d asx] * SH i TON nan hie, 3 BP et WE Z, 4

5 SANA OE,

ry (> 3 EO SESS a : mearse PTT PN Soheat snk PIN | Single else} |} FSF df | Po 10 10 10 0 » 1 60 80 10 120 KO 160 Collector-to-Emitter Voltage, Vcg -— V Ambient Temperature, Ta — °C No products described or contained herein are intended for use in surgical implants, ‘life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and detend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual Property rights or other rights of third parties. ee No.2060-4/4