2SD1499 PANASONIC | Alldatasheet
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Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 n Features l Extremely satisfactory linearity of the forward current transfer ratio hFE l Wide area of safe operation (ASO) l High transition frequency fT l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Unit V V V A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 hFE2 * hFE3 V BE V CE(sat) fT C ob Conditions V CB = 100V, IE = 0 V EB = 3V , IC = 0 V CE = 5V , IC = 20mA V CE = 5V , IC = 1A V CE = 5V , IC = 3A V CE = 5V , IC = 3A IC = 3A, IB = 0.3A V CE = 5V , IC = 0.5A, f = 1MHz V CB = 10V , f = 1MHz min typ max 200 1.8 2.0 Unit mA mA V V MHz pF *hFE2 Rank classification Rank Q P hFE2 60 to 120 100 to 200 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 100 150 –55 to +155 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1
PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =2.0W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C IB=100mA 80mA 40mA 20mA 10mA 60mA Collector to emitter voltage VCE (V) Collector current IC (A) VCE =5V TC =100˚C 25˚C –25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =5V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms t=1ms DC Collector to emitter voltage VCE (V) Collector current IC (A) 10–3 10210–2 110–1 10 10 3 104 10–2 10–1 102 (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)