2SD1140 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. Unit in mm S.IMAK POWER AMPLIFIER APPLICATIONS. fa e High DC Current Gain jee : hpR=4000 (Min.) o7smax “Lomax. @ Low Saturation Voltage O.8MAX. 2} 4] 2 : VCE (sat)=1.5V (Max.) o.6Max. z|2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL ef | far Collector-Base Voltage Vepo | 30 | Vt Mth Ey Collector-Emitier Voltage Vero [30] Vv (Fa E Emitter-Base Voltage VEBO = [Collector Current | I TTA 2 couect Collector Current Ic 15 A 1 EMITTER 3._BASE Collector Power Dissipation [ Po [900 | mw | JEDEC TO-92MOD Storage Temperature Range —55~150 = TOSHIBA _2-5J1A EQUIVALENT CIRCUIT Weight : 0.36g (Typ.)
9 COLLECTOR
BASE o—+ i i ' \\ \\ eS EMITTER eioniean2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your, designs, please ensure that TOSHIBA. products are, used within specified Speratng ranger as fe forth in‘the Bost recor products spechestcns Als, please Leep im ming the precautions and conditions set Tort i the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only as a guide for the applications of our products. No. responsibility is assumed by TOSHIBA CORPORATION for ay Iniangentents of ftalecusl propery reuse ret CP tie ire patties RAEN tay ess hom Ne use. Ne Neanse s Gres by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo__|VcB=30V, In=0 | — | — | 10 [| ZA | Emitter Cut-off Current Tgpo __|VEB=10V, Ic=0 [| — | — | 10 | ZA | Collector-Emitter Breakdown Ere Kesforom nee | »|-[-[ DC Current Gain [ee [Von=8V, 1g=i60mA [aooo | == Collector-Emitter Saturation _ _ waa ferminme |= [=|] Base-Emitter Saturation tasow fosik won = |= [|v | Rone ase |= || - | Ta W)por is Switchi H H Time _ Storage Time bana |= [os | - | “ . Tp ()= IB (2)=1mA, y, Fall Time te DUTY CYCLE=1% oy 038 1997-02-03 2/4
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é oe soo ht} — 300! 03 1.003, 0.01 0.03 On (se our comet te s COLLECTOR-EMITTER VOLTAGE Vcog (V) o Ic - SOI Ven (sat) - IC 2 COMMON EMITTER ETA | & |: Trt = 1000 ge SESE torn a pf SE $3 COU Fn iL E “EL Teneo af TT a Be roe | 2 SS 5 CaS | oo ge SCT Ne 5 YS) 1 |
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© ios oor 0030 BASE-EMITTER VOLTAGE Vgg (V) COLLECTOR CURRENT Ic (A) 7997-02-03 3/4
VBE (sat) — IC Pc - Ta Zz CTI ETI t¢/1=1000 @ w«tINITT TTT TTT fattest Comer} gE ENE ze brewmewo-4 TINT TUT Bog IN eee fe cresenntoneee cial RRR a — a i) Es Ff 00 FH ge 0.4] ‘ aS Ea 0 Z oe UUM | LIE UTI 1 COC COLLECTOR CURRENT Ic (A) AMBIENT TEMPERATURE Ta (°C) SAFE OPERATING AREA 3000 peer i Xoo NAAT |
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s | Dc ormeanos TAL bo soa (Ta=25°C) ANY MN & EE —— oe BRR 3 50] ee LINEARLY WITH INCREASE IN TEMPERATURE. VoRo MAX. | sa 3 0 30 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-02-03 4/4