D10XB60H NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
C/ i_/ Li nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D10XB60H TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIER PRV : 600 Volts lo : 10 Amperes FEATURES: * Glass passivated junction chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 4.28 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. RBV4 i 0.996(25.3) , n~ 6.972 (24.7) "1 Q.3Q3 (7.7) 0"287~(7!3)" Dimensions in inches and (millimeters) RATING Maximum Peak Reverse Voltage Maximum Average Forward Current With heatsink, Tc = 11 2 °C (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C Maximum Peak Forward Surge Current, Tj = 25 °C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms £ t < 10 ms, Tj = 25 °C Maximum Forward Voltage per Diode at IF = 5.0 A ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, VR=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case, With heatsink Maximum Thermal Resistance, Junction to Ambient, Without heatsink Maximum Thermal Resistance, Junction to Lead, Without heatsink Operating Junction Temperature Storage Temperature Range SYMBOL VRM lo USM I2t VF IR Rejc RSJA Reji Tj TSTG VALUE 600 2.9 170 110 1.05 1.9 150 -40to + 150 UNIT V A A A2S V HA °C/W °c/w °c/w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conductors is believed to he hoth accurate and reliable at the time ot'aoii going to press. However. NJ Semi-Conductors assumes no responsibility Ibr any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers lo verily that datasheets are current before placing orders Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( D10XB60H ) FIG.1 - DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 90 100 110 120 130 140 150 CASE TEMPERATURE, ( °C) LU ce o LU Q I cc o CL 10 100 NUMBER OF CYCLES (CYCLES) FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FIG.4 - POWER DISSIPATION HI OL D O Q O LL. POWER DISSIPATION , (W) ^L -t M ro to 3 en O Ui o Ln o s T ne wav j = 150 C 0 2 468 10 12 14 AVERAGE RECTIFIED CURRENT, (A) FORWARD VOLTAGE, (V)