CXK5B81020JM-12

CXK5B81020J SONY | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Single 3.3V power supply: 3.3V ± 0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 864mW (Max.)
• Package line-up Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package CXK5B81020TM 400mil 32pin TSOP package Function 131072 word · 8-bit static RAM Structure Silicon gate Bi-CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. Buffer A12 Buffer Row Decoder Memory Matrix 256 × 4096 I/O Buffer I/O1 I/O8 Vcc GND A15 A16 A13 A14 A11 A10 WE OE CE 1A3 2A2 3A1 6I/O1 Vcc 8 GND 9 I/O3 1 WE A15 14 A14 15 A13 16 A432 A531 A630 A729 I/O726 GND25 Vcc24 I/O623 A10 A11 A1217 I/O Gate Column Decoder CE OE I/O2 I/O4 A16 I/O8 I/O5 Block Diagram Pin Configuration (Top View)Pin Description Address input Data input Chip enable input Write enable input Output enable input +3.3V power supply Ground No connection A0 to A16 I/O1 to I/O8 CE WE OE V CC GND NC Symbol Description CXK5B81020TM 32 pin TSOP (PIastic) CXK5B81020J 32 pin SOJ (PIastic)

– 2 – CXK5B81020J/TM Absolute Maximum Ratings (Ta = 25°C, GND = 0V) *1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns. *2 Air flow ‡ 1m/s. Truth Table Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V) * VIL = –2.0V Min. for pulse width less than 5ns. VCC VIN VI/O PD Topr Tstg Tsolder –0.5*1 to +4.6 –0.5*1 to VCC + 0.5 –0.5*1 to VCC + 0.5 1.5*2 0 to +70 –55 to +150 260 • 10 235 • 10 V V V W °C • sec °C • sec Item Symbol Rating Unit H L L L L H H L H Not selected Read Write Output disable High Z Data out Data in High Z I SB1 , ISB2 ICC ICC ICC CE OE WE Mode I/O1 to I/O8 Current Supply voltage Input high voltage Input low voltage Item Symbol Min. Typ. Max. Unit VCC VIH VIL 3.0 2.0 –0.3* 3.3 3.6 V CC + 0.3 0.8 V V V Supply voltage Input voltage Input and output voltage Allowable power dissipaiton Operating temperature Storage temperature Soldering temperature • time J TM

– 3 – CXK5B81020J/TM I/O Zo = 50 Ω R L = 50Ω VL = 1.4V I/O 3.3V 1179Ω 868Ω5pF∗2 Output load (1) Output Load (2)∗1 ∗1. tLZ, tOLZ , tHZ , tOHZ , tOW , tWHZ ∗2. Including scope and jig capacitances Fig. 1

Electrical Characteristics

DC Characteristics (Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C) * Vcc = 3.3V, Ta = 25°C I/O Capacitance (Ta = 25°C, f = 1MHz) Note) This parameter is sampled and is not 100% tested. AC Characteristics

• AC test condition(Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C) Input leakage current Output leakage current Average operating current Standby current Output high voltage Output low voltage ILI ILO ICC ISB1 ISB2 VOH VOL VIN = GND to VCC CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC Cycle: Min. Duty = 100% IOUT = 0mA CE = VIL VIN = VIH or VIL CE ‡ VCC – 0.2V VIN ‡ VCC – 0.2V or VIN ≤ 0.2V Cycle: Min. Duty = 100% CE = VIH VIN = VIH or VIL IOH = –2.0mA IOL = 2.0mA –10 –10 2.4 Item Symbol Conditions Min. Typ. * Max Unit Input capacitance I/O capacitance Item Symbol Conditions Min. Typ. Max Unit C IN C I/O pF pF VIN = 0V VI/O = 0V Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level Output load conditions V IH = 3.0V VIL = 0.0V tr = 2ns tf = 2ns 1.4V Fig. 1 Item Condition +10 +10 240 100 0.4 µA µA mA mA mA V V

– 4 – CXK5B81020J/TM

• Read cycle * Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested.
• Write cycle * Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested. tRC tAA tCO tOE tOH tLZ tOLZ * tHZ * tOHZ * ns ns ns ns ns ns ns ns ns Read cycle time Address access time Chip enable access time Output enable to output valid Output data hold time Chip enable to output in low Z (CE) Output enable to output in low Z (OE) Chip disable to output in high Z (CE) Output disable to output in high Z (OE) Item Symbol Unit -12 Min. Max. tWC tAW tCW tDW tDH tWP tAS tWR tOW * tWHZ * ns ns ns ns ns ns ns ns ns ns Write cycle time Address valid to end of write Chip enable to end of write Data valid to end of write Data hold from end of write Write pulse width Address set up time Write recovery time Output active from lend of write Write to output in high Z Item Symbol Unit -12 Min. Max.

– 5 – CXK5B81020J/TM Timing Waveform Address tAA

• Read cycle (1) : OE=VIL, WE=VIH tRC tOH Data out Previous data valid Data valid Address tAA tRC tCO tLZ tHZ tOHZ tO EtOLZ CE OE Data out High impedance Data valid
• Read cycle (2) : WE=VIH

– 6 – CXK5B81020J/TM

• Write cycle (1) : WE control Address tAS tWP tDH tWHZ tDW CE WE Data out High impedance Data valid tOW Data in tA W tWC tCW tWR
• Write cycle (2) : CE control Address tAS tD W CE WE Data out High impedance Data validData in tA W tWC tWR tD H tWHZtLZ tWP tCW * Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

– 7 – CXK5B81020J/TM Example of Representative Characteristics tCO Supply current vs. Frequency 75 10025 50 1.0 0.75 0.5 0.25 ICC — Supply current [Normalized] Supply current vs. Supply voltage VCC — Supply voltage [V] 1.4 1.2 1.0 0.8 0.6 ICC — Supply current [Normalized] Supply current vs. Ambient temperature Ta — Ambient temperature [°C] 60 8020 400 1.4 1.2 1.0 0.8 0.6 ICC — Supply current [Normalized] Access time vs. Load capacitance C L — Load capacitance [pF] 120 16040 800 1.8 1.6 1.4 1.2 1.0 tAA , t CO , t OE — Access time [Normalized] Ta = 25°C VCC = 3.3V Frequency (1/tRC , 1/tWC ) [MHz] Ta — Ambient temperature [°C] 60 8020 400 1.4 1.2 1.0 0.8 0.6 Access time vs. Supply voltage VCC — Supply voltage [V] 1.4 1.2 1.0 0.8 0.6 tAA , t CO , t OE — Access time [Normalized] tAA , t CO , t OE — Access time [Normalized] Access time vs. Load capacitance 12ns tOE tCO , tAA Ta = 25°C VCC = 3.3V Ta = 25°C tAA tCO tOE VCC = 3.3V tAA tCO , tOE tOE tAA , tCO tAA tOE

– 8 – CXK5B81020J/TM Input voltage level vs. Supply voltage V IL , V IH — Input voltage [Normalized] Standby current vs. Supply voltage VCC — Supply voltage [V] 1.4 1.2 1.0 0.8 0.6 ISB1 , I SB2 — Standby current [Normalized] Standby current vs. Ambient temperature Ta — Ambient temperature [°C] 60 8020 400 1.4 1.2 1.0 0.8 0.6 ISB1 — Standby current [Normalized] Standby current vs. Ambient temperature Ta — Ambient temperature [°C] 60 8020 400 1.4 1.2 1.0 0.8 0.6 ISB2 — Standby current [Normalized] VCC — Supply voltage [V] 1.2 1.1 1.0 0.9 0.8 V OL — Output low voltage [V] 0.6 0.80.2 0.40 1.8 1.4 1.0 0.6 0.2 Output high current vs. Output high voltage VOH — Output high voltage [V] 4.0 3.0 2.0 1.0 0.0 IOH — Output high current [Normalized] IOL — Output low current [Normalized] Output low current vs. Output low voltage Ta = 25°C ISB2 ISB1 Ta = 25°C VIH VIL VCC = 3.3V VCC = 3.3V VCC = 3.3V VCC = 3.3V

– 9 – CXK5B81020J/TM Package Outline Unit: mm CXK5B81020J CXK5B81020TM SONY CODE EIAJ CODE JEDEC CODE M PACKAGE STRUCTURE PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING 42 / COPPER ALLOY 20.96 – 0.12 + 0.4 0.73 ± 0.08 1.27 10.16 – 0.12 + 0.3 11.05 ± 0.12 R0.25411 6 1732 0.43 ± 0.1 0.95

0.635 MIN

3.5 ± 0.25 2.2 – 0.11 + 0.2 9.33 ± 0.18 0.2 – 0.05 + 0.1 φ0.178 SOJ-32P-01 ∗SOJ032-P-0400-A 1.3g 32PIN SOJ (PLASTIC) 400mil 0.1 SONY CODE EIAJ CODE JEDEC CODE PACKAGE STRUCTURE PACKAGE MATERIAL LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT

42 ALLOY

32PIN TSOP (II) (PLASTIC) 400mil ∗20.95 ± 0.1 32 17 1.27 0.4 ± 0.1 DETAIL A 0° to 10° 0.1 ± 0.1 0.5 ± 0.1

1.27 MAX

A 0.127 – 0.02 + 0.05 TSOP (II) -32P-L01 TSOP (II) 032-P-0400-A 0.21 M 0.1 NOTE: Dimension “∗” does not include mold protrusion.