CXK58257AP SONY | Alldatasheet

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-70L/M0L/12L SONY. CXK58257AP/ASP/AM oiocia 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP CXK58257AP/ASP/AM is 262,144 bits high 28 pin DIP (Plastic) speed CMOS static RAM organized as 32,768 P~ words by 8 bits and operates from a single 5V A ee supply. This device is suitable for use in high Moe speed and low power applications in which LEE EN battery back up for nonvolatility is required. enn * 300mil DIP covers only L-version. a | : Features CXK58257ASP_ CXK58257AM Fast access time: (Access time) 28 pin DIP (Plastic) 28 pin SOP (Plastic) CXK58257AP/ASP/AM-7OL, 70LL_ 7Ons(Max.) CXK58257AP/ASP/AM-10L, 10LL 100ns(Max.) ial CXK58257AP/ASP/AM-12L, 12LL 120ns(Max.) C2 BEN \\ A gGemr ¢ Low power operation : AEs Nl! ' OE CXK58257AP/AM-TOLL, TOLL, 12LL ; hie any a We Standby: 1 uW (Typ) ail Operation : 15mW (Typ.) CXK58257AP/ASP/AM-TOL, 10L, 12L ; | Operation : 15mW (Typ.) @ Available in 28 pin 600mil DIP, 300mil DIP ®Single +5V supply: +5V+ 10% and 450mil SOP Fully static memory:-No clock or timing strobe required Function * Equal access and cycle time 32768-word X 8-bit static RAM Common data input and output: three state output Structure © Directly TTL compatible : Silicon gate CMOS IC All inputs and outputs Block Diagram Pin Configuration Pin Description anofiatl (Top View) Description aro ae [3 vee ane E EI ‘se [O ax [| bal we Address input tae mt rebe one sae | a7 GI Be) ars ise as | ES} ae ave Data input/output [eas] ul Ey are Chip enable input Pala voce as leq oe Write enable input Re i:|| [| Oecoder ae 4 Ee OE Output enable input er =o Fives [Yoo |+8V_power supply eT, aoe 101 for {GND [Ground ol-to voz [| [ios o> 2 ono fra] fis] ivo4 90447846 ~ ST

Absolute Maximum Ratings (Ta = 25°C, GND = OV) , Ves Vw i RL Ty Allowable power dissipation Ww * VIN, Vio=—3.0V Min. for pulse width less than 5Ons. Truth Table [ce | O€ [WE | Wade [1701 10 1708 | Ves Carrot | x Not selected High Z L H_| Output disable “High Z| loot, looe | “HS Read 7 Data out | oot, loca _| [ee Wine [ate in| x:"H" or “L" DC Recommended Operating Conditions (Ta=0 to + 70°C, GND=O0V) [Supsiv voltage | veo [48 | 50 | 55 | v | [input Fish votege | Vn | 22 | — | Varroa [Input iow votteos | Vu__| -oa* | — | 08 * Vi_=—3.0V Min. for pulse width less than 5SOns. ee

Electrical Characteristics

« DC and operating characteristics (Vec = 5V + 10%, GND = OV, Ta=O to +70°C) ~TOL/10L/12L | -7OLL/1OLL/12LL Ite \\Symbol Test condition Unit} Input leakage _ wero ewe [peal] as |-o5|— [os [x Output leakage CE=Vin or OE = Vin 0s _ A current Vi7o=GND to Voc " CE=Vi, Vin=Vin or Vin, Operating four = OmA 3 3 10 power supply mA current CEs0.2V 1 Vin $0.2V or 2 Vcc - 0.2V operating Duty= 100%, | 10L/10LL | — | 23 23 mA te [eave pose ton 2 foal Output high =- Output low = rl I * Voo = BV, Ta = 25 1/O capacitance (Ta = 25°C, f = 1MHz) [input capacitance | Cw | Vw=ov | —| 6 | oF | Note) This parameter is sampled and is not 100% tested. To eSSSSSSSSSSSSSSSSSSseeeeee

SONY (CXKEB257AP/ASP/AM AC characteristics © AC test conditions (Voc = 5V + 10%, Ta=0 to +70°C) Input rise time tr=5ns Input fall time tf = 5ns a T reference level Output load CL*= 100pF, 1TTL conditions * CL includes scope and jig capacitances. eee

¢ Read cycle [in [Mx Min | x. | Min. [ Ma | a a Chip enable access time tco | — | 7o | —| 100 | 120 | ns | [Output holt from address change [tor | 20 |—| 20 |—| 20 |—| re | fro fo Po Pa oz| 8 |—| 5 [Chip disabe to output in high 208 [toe* | o | 80] 0 | 20 | 0 | 20 | re | * tz and toHz are defined as the time required for outputs to turn to high impedance state and are not referred to as output voltage levels. Write cycle von moa a [iin. [Mx [Min [Max | Win. [Ma | Address valid to end of write wef fe et ns io ewe oot wie fee =| or [eof =f Data hold from write time [tor {| o |—] o [—j| 0 [—T] ns | [Write recovery ime WE (tm | 0 |=] 0 |—| 0 |—| re | [Output active trom end of wie [tow | 10 |—| 10 |—| 10 [—| re | [Wite to ouput in high Z——_[owa* | 0 | 2] 0 | | 0 | 2 | ro | * twuz is defined as the time required for outputs to turn to high impedance state and is not referred to as output voltage level. eee

SONY (CXK58257AP/ASP/AM Timing Waveform . © Read cycle (1) : CE=OE= Vu, WE= Vin _ tre Address tA tou Data out Previous data valid Data valid © Read cycle (2) : WE= Vin 7 - tre = . XA ALLL tco tHz tz OE AAAS LLLLN Write cycle (1) : WE control © - twe twR o ANAAAAAAAAAAAASAA — SQ tOH bata in K bata vais Ssaasasa bow SZ Data out LDLDLDDPDLDPV High impedance KAN SS

SONY (CXKBB257AP/ASP/AM Write cycle (2) : CE control two ate —_ NI | o XAAAAAAAAAAANAAA tas: teow | twat cE AS we i~—-—— MAAR KLLL P| oe Le AVAVAN Data out Ava, High impedance During 1/0 pins are in the output state, the data input signals of opposite phase to the output must not be applied. | Data Retention Characteristics (Ta=0 to 70%) Item Symbol Test conditions ~ ane _a Trt Unit Data retention aE Sim [eevee [an |— [os [an |— Veo = 3.0V Vec = 2.0 to 5.5V —!]o02 A CE Voo ~ 0.2V “ 8 Data retention Chip disable to data — setup time retention mode | o |—|—| 9 ns * tro: Read cycle time Data retention waveform toons Data retention mode tR. Vee — 2.2V --nf ---n--\\ = nnn nen een eee fn nen ee en eee cE CEB Veo —0.2V eeSeeSeSeSSSSSSsSsseeeeeeeSeeeeeee

Example of Representative Characteristics Supply current vs. Supply voltage Supply current vs. Ambient temperature Aes Bod TT te Batti ttt tt

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3 10 Jt ArT E 1.0] pe teoe peo ES BLA] TT | eee | g LIT TT |vegesov | é@o¢tt{ TT TT | gost ti Tt | t | 450 4.75 5.0 825 55 ° 20 40 so 80 Vec — Supply voltage (V) Ta~ Ambient temperature (°C) ‘Supply current vs. Frequency Access time vs. Load capacitance to 420100__70 ns = 16 g ELLE LTA i | |--LEAY | Bors ve TA | 5 dd OH

2 LLY [Aout 1 2 LL Zee TT

Seo LAL | TI on) 4 » ALT TTT g [LA [tenes veewsov © Fit ttt tt | #, 4/7] | | I I I | f) 4 8 12 16 ° 100 +200 300-400 Frequency (1/tro, 1/twe) (MHz) Ci — Load capacitance (PF) Access time vs. Supply voltage Access time vs. Amblent temperature. 14 14) PLTT TTI TT i P| tf] Bia ttt TT Tt i H+ H+ oe i | | ty 3 fal 3 eee ete Pos SFE i StH [| aE ECC Lee e EEL | eae | é Hey ER] goat ti | iT | gorti tii} tf 45 475 50 5.25 5.5 0 20 40 60 80 Vee ~ Supply voltage (V) Ta— Ambient temperature (°C) a SSSSSSSSSSSSSSSSSSSSSSSSSSS

Standby current vs. Supply voltage Standby current vs. Ambient temperature

1 JOOCCoLT eo

14 y Z| Poor tee ee | COCO bs yy ars 7en PILL YL go eT fo 2 TTT B eETTT IZLE i TW bod DD Teewe | 8 ol 14 MEP 4neen AA LEITIL ind 20 3.0 4.0 5.0 6.0 o2e 20 40 60 80 Vec ~ Supply voltage (V) Ta~ Ambient temperature (°C) Input voltage level vs. Supply voltage ‘Standby current vs. Ambient temperature 1.2) 14; s TODD Saeeneen PSS ee Pee | BCPC rere CCC

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2 Coo PCC

5 CL feat PCE ee

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08S ars 5.0 525 3.5 ha) 20 40 60 80 Vec — Supply voltage (V) Ta— Ambient temperature (°C) Output high current vs. Output high voltage Output low current vs. Output low voltage a 4 So 4 ‘TODD JLLELET TZ Passe CeCe

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<a WJOLEEE YT FOOSE PCO 2 “COP NCO woe 2 x! z pe DONT oeeenn oe ae SLL ATT i a 1 2 3 4 5 ° O2 O4 06 08 Vor — Output high voltage (V) Vow — Output low voltage (V) ce

Package Outline | Unit: mm CXK58257AP 28pin DIP (Plastic) 600mil 4.29 ES | \\ohase EE ost 3 TEtad nwuelop1e9 0-0 CXK58257ASP 28pin DIP (Plastic) 300mit 2.09 sath % “e Be 15 5 . 254 - a : sot z piPg 0300: * (Similar) CXK58257AM 28pin SOP (Plastic) 450mil 0.79 19.0 °8f 2attts z n DRORMOR ADR AONG 4a al | 1 astB8s 7 . ay 3 | g HUCDOGDGO DOU E ae 1 ive xsl 21 axsith COI [ety nave lesoroze-p-0450-A | [vepec coogl — ———