CXK5816PN/M-15L

CXK5816PN SONY | Alldatasheet

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e Y. 10/10L/12. 2048-word x 8 bit High Speed CMOS Static RAM eee eee Eee Description Package Outline Unit mm CXK5816PN/M is a 16,384 bits high speed CMOS static RAM organized as 2,048 words by 8 bits and operates CXK5816PN 24 Pin DIP (Plastic) from a single 5V supply. This device is suitable for use in F high speed and low power spplications in which battery back tt “a Up for nonvolatlty is required. al A} Features bY o'to1s* * High speed operation (Access time) + (CXK5816PN/M = -10, 10L 100ns (Max.) ; dalled IP CXK5816PN/M = --12, 12L 120ns (Max.) a CXK5816PN/M = -15, 15L 150ns (Max.) = * Low power consumption (Standby) (Operation) zs! CXK5816PN/M -10, 12, 15 = 100u#Wi Typ.) 125mW(Typ.) CXK5816PN/M -10L. 12L, 154 SWiTyp.) 125mW(Typ.) * Single +5V supply: 5Vt10%. vos EF required * Equal access and cycle time “, * Common data input and output: three-state output (CXK5816M 24 Pin SOP (Plastic) ‘ * Directly TTL compatible: All inputs and outputs alt its + Low voltage data retention: 2.0V (Min.) ligpoeenauaail Function | ie 2048-word x 8 bit static RAM | ) | | F Structure Tueneeveue Silicon gate CMOS IC * all TT . Block Diagram te ne se 2 a — B: Ep | Note) All Typical values are measured under the conditions Vec=5.0V and Ta=25°C. -27- 50846C-ST

a (CXKS816PN/M SONY. ona SONY Pin Configuration (Top View) Pin Description a fay w= Chip enable input a2[é] [i3} a10 OE __ _Output enable input a fis] Vee +5V power supply ver [3] [is}ivor woe [fo] [s]vos vos fe] fia] vos ‘ono [i2} [is] voe Absolute Maximum Ratings Ta=25°, GND=0V ee Saag va

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“5 10 50 [Soldering temperature [solder | 260710 | °C = sec | * Vcc. Vin Vvo Minimum value=—3.0V, Pulse width is under 50 ns. Truth Table [ce [OE[ WE] ose [vor w vos A ES [ef [af output dibs righ 2 Yer ec | ES Note) X: “H” or “L” DC Recommended Operating Conditions Ta = 0 to +70°C, GND = 0V [item Sra [ve] Max,[n | Supbvvolie | vee | 4s [30 [ss] v | Inpatiow voluse | Vi [-03 | =| 08 [v | -e-

(CXK6B16PN/M SONY: exKBeIePNM DC and Operating Characteristics Vec=$V+10%, GND=0V, Ta=0 10 +70°C CXKS816PN/M/SP CXKS816PN/M/SP Item symbol Test condition 10/12/15 =10L/12L/15L + [ins Ttye** [Max | win. [typ* [Max | [Tapatieakase conent | 1, | VerGNDoVe | 2 | — | 2 [2 |— | 2 [aa] Output leakage CE=Vin or OB=Vin 2 | -2 2 A current Yuo=GND to Vec * Operating power _ ~ fers [um [are wm |— [= f@ [=] | [a ‘Average operating Tece | Cycle = Min, Duty = 100% 28 | 60 28 | 60 TA current lour=0mA a1) | 2075) a1) | *75) Standby current [Teer [CESVec~0.2v | — [oor | 1.0 [— [oooi | 005 | ma] [tee [CE=Ve | [os [2 [Toa fT mal [Output bien volae> [Vou [lw=-lOnA 3a | — | — [aa —|— Tv] [oviruttow vores | Vor [in=t0ma | — | — [oa |—[— | oa |v] * Note) Shows CXKS8I6PN/M/SP-10, 10L value. * Veo=SV, Ta=25°C Capacitance Ta=25°C, f=1 MHz [tee nt i [i [| va | [spot spaciase ————fWweov | ow | — [7 [oF | Lspavoupetanncinne | ~ Wow’ | Gro [=| 0 | oF | Note) This parameter is sampled and is not 100% tested. AC Operating Characteristics + AC test condition Veo = SV + 10%, Ta = 0 to +70°C a Input pulse high level Input pulse low level mm [input rise tine [=e] | taputfalltime [t= ns c Input and output timing Ps 1.5V reference level Output load Cut = 100pF, 1TTL * CL includes scope and jig capacitance. ~29-

a (XK5816PN/M SONY. cuceenm SONY + Read cycle CXKS5816PN/M | CXK5816PN/M | CXK5816PN/M. [iain | oex. [win [ nox. | Min | Ma. | [Reaseysetime ide | too | — fz | — [iso | — | | [Address asses une [xn] — | ao — | 90) — | 150 | | [‘chipenabie aconstine [aco | — | 100 | — | 120 | — | 150 | | [output ensbitooutputvald Tre | — | so | =| ss | — | oo | | [Ouputhou fiom aise cuage [ewe [ts | — is | — [1s | — [= | [chip enable tooutputiniow 2 us fas | — [as | — [1s] — |» | [ outputenabiete ouput now 28) [tos [10 | — | | — [10 | — |» | [hip disable outputin igh @ CE) [rs [0 | 30] 0 | [0 | so | w | [Outpt disabie wo ouput in high 2COFV [rte | 0] 30] 0 | a0 | 0] so] = | * Note) oz and tonz are specified by the time length until the output circuit is turned off and not specified by the output voltage level » Write cycle ‘CXK5816PN/M | CXKS816PN/M | CXKS816PN/M. [iin [ox Win_[ Wax | in [Ma | [Wate geleume [tee P00 = Pao ff is0 f= oe | [Address vad to ond wate [xe [00 [=P yoo) a0 os | [chip enateto end of write [vee [00 | — | 100 | — [10 | — | = | [Bate towite ine oetnp [tw [30] — [3s |= [ao | — |= | [ Datahoid from witetime [tw [0 [=| 0 ]—|o |—|m—| [Wate puke wits] vr [oo [| — | 7s |— [oo | —| =| [Address setupiiné Jo f= |« |- fo ]— |=] [ waterecovevtine [te | s |—] 8 |— [5s |— | | [Oumutacivetiomendotwite [ee [is | — 1s | — [is [1s | [Waewountmnm? [ewe] 0 [so | o | [o | | =| * Note) twuz is specified by the time length until the output circuit is turned off and not specified by the output voltage level. level. _20-

(CXK5B16PN/M SONYe Timing Waveform (1) Read Cycle [WE=Vin] OB Xi LLM teo EE Pate out High impedance Aaan (2) Write Cycle (1): WE Control (OE= Vin] ve twr (#2) oo WRK Md — tas. twp (1). WE We Data in KD pe owen XXRRRRRKKED OK (93) (3) nate

a (CXK6816PN/M SONY. CXR IPN Write Cyele (2): CE Control (OE=Vu} we Address tas tew (#1) Yam (02) CE te OD WE tow ton —_—SSSsSSSSssssSSSSSSSSSSSSSSSsSSSe Data out High impedance Note) "1 A write occurs during the low overlap of CE and WE. *2 twa is measured from the earlier of CE or WE going high to the end of write cycle. *3. During this period, 1/0 pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. Data Retention Characteristics Ta =0 to +70°C CXKS816PN/M CXKS816PN/M lsymbol] Test condition 10/12/15 =10L/12L/15L Unit Data retention are CRS Vee ~0.2N | 20 | so | ss | 20 | s0 | ss | v | Data retention Tecora | Vee =2.0 to 5.5V, current wee CEZVec-0.2V Data retention teoes | [hip disable to set up time cons | data retention mode [Recovery ime [te [tet J = T= [tees [= | =~ Ts | * tac : Read cycle time Deta Retention Waveform topes Data retention mode te Vee ——J] BBV ~ anol renee en nnn nem net cen ere ten n af nnn ow teen - CB2Vcc~0.2V CN) a eee eee -32-

a (CXKS816PN/M SONYe cxnesterNM eee Supply current vs. Supply voltage Supply current vs. Ambient temperature ga 5 ooo “COE

3 Ta=25°C ; Icer @O

PSceer.. En Se gus Ld tess 52 i Ht oe te AW é an PA | yy ett | eT 2 oe BLT pe gL Se ; a SS | ‘oa tT Se! = LLL fis cera 2° CEPT TT Is I en £,i 1 T 7 I | | Merry 4.75 5.0 5.25 55 ° 20 . “ oo @ Vee ~ Supply vottage (V) Ta — Ambient temperature (°C) Supply current vs. Frequency Access time vs. Load capacitance My 150ns__120ns _100ns s oe ; “Coo z° T “TTT Ter

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Poe | ps Lt tert tI e ELT TTT Tt eoTTrT TT 7 | TE TT sie ti ttt one e LT TTT tt ett ti tt tt | toatl] 1 td | 2 4 6 @ 70 100 200.300 ~«400~=~*«S GO 1/two.l/tec Frequency (MHz) Ci. — Load capacitance (pF) Access time vs. Supply voltage Access time vs. Ambient temperature ar = 14 a (LL [J ete | | [Joven] [ [ fd] a Cx. =100pF Ci =100pF Pott : 5 2 ZV Z z Fi P| [| : Lit tt te Woe Pope eT |) eA # Err it tt eof} tity ce a g HH eT TTT Try TI #,. 77 1 TI gL 11 Tit Tt ° a5 4.75 5.0 5.25 55 ° 20 40 60 80 Vcc — Supply voltage (V) Ta — Ambient temperature CC) -33-

a (XK5816PN/M SONY: Standby current (1) vs. Supply voltage Standby current (1) vs. Ambient temperature Tu He j LTT TET i reLerel z Banezana 3 10) g ? v4 COT oe 4neee PL evan g 06) 7 2 05 1, pet es as | oe PTT TTT rr A LLL TT 20 3.0 4.0 5.0 6.0 ° 20 40 60 60 ‘Vcc — Supply voltage (V) Ta — Ambient temperature (°C) Standby current (2) vs. Supply voltage Standby current (2) vs. Ambient temperature . a (Het | FEE a eee t LLL CI BCC g “CPT e LLL eee i we Cope} "CREE 1 eT aeeeenee POP ass # DPE cr 45 475 5.0 5.25 ss ° 20 “ 60 80 ‘Vcc — Supply voltage (V) Ta — Ambient temperature CC) Output high current vs. Output high voltage Input voltage vs. Supply voltage Output low current vs. Output low voltage, he € val _| veers Titi); 3 [| Ta=25°C Yt tt ge Ter25 C mc i 5 | C_| Tl : 4 bogey) et Po ba, H PN ZT nd Ee | eT Pits beer e"TPDPALELI.? «67a Blrpw7ryei i" = EEE TTT eT ,.s fee LTT TET | Vou (Vv) 1 2 3 4 s ‘Vee ~Supply voltage (V) Vou — Output low voltage (V) Vox — Output high voltage (V) ue

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