CXK581000P SONY | Alldatasheet

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Technical content

SHE D M@M@ 8382383 0004756 97 T MESONY %-22-ly -10L/12L/15L sony. CXK581 000 P/M “10LL/19LL/1SLL 131072-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT PRODS

Description

CXK581000P/M is a general purpose high speed ©XK581000P ‘CXK581000M CMOS static RAM organized as 131, 072 words by 8 382 pin DIP (Plastic) 32 pin SOP (Plastic) bits. Operating on a single 5V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up y for nonvolatilty is required. Features | © Fast access time : (Access time) CXK581000P/M-10L/10LL 100ns (Max.) CXK581000P/M-12L/12LL 120ns (Max.) CXK5B1000P/M-15L/15LL 150ns (Max.) ‘© Low power consumption operation : Standby /DC operation CXKS81000P/M-10L, 12L, 15L; 10 wW (Typ.) /35mW (Typ.) YOLL, 12LL, 15LL ; 3.5 uW (Typ.) 35mW (Typ.) © Single +5V supply : +5V + 10% © Fully static memory --- No clock or timing strobe required, © Equal access and cycle time. © Common data input and output:three state output. © Directly TTL compatible ; All inputs and outputs. © Low voltage data retention : 2.0V (Min.) © CXK581000P 600mil 32 pin DIP package CXK581000M 525ml 32 pin SOP package Functions 131,072 word x 8 bit static RAM Structure Silicon gate CMOS IC Block Diagram Pin Configuration (Top View) Pin Description 20 | wt 1a vee Symbol _ Description re ove Ea] 3 ae AQtoA16 | Address input he lef ae Be Toit ms see Bo 08 Data input ouput ror] ae] else Chip enable 1, 2 el o@ fal +» CET CE2 | input sol af fa) aso #32 | =& Bo [OE —__| Output enable input = Py a| Bi 108 Power supply Fo [von vest Faves [NC No connection Hissp T I ‘one [ie] [i] vo “me £89322006 - ST - 264 -

SHE D M@ 8382383 0004757 83b MMSONY SONY SONY CORP/COMPONENT PRODS —————T T-46-23-14 Absolute Maximum Ratings (Ta=25 °C , GND=0V) [tom | Smo « ng «Ut remicomenten |r LS ar | * Vin, Vuo= — 3.0V Min. for pulse width less than 50ns. Truth Table [cer | cee | OE | WE [Woe [Wr [vere [a [x [x [x | Netsoleed | Highz | ime | [x TPL Wesoeted [High || [ea Hour asabio | Hon | ese | [ew Pe Pw [Read [Data out | tee. [a fe Wite [at nee x HT or"L” DC Recommended Operating Conditions (Ta=0to +70°C ,GND=0V) [tom | Symbot| in| yp [Max | Unt] [Suppbvotage | ve_| 45] so | ss v | [nputhgh votage [vw | 22 | —— | Vonas | v | [inputiowvotage [va [ose | — | oa | v | * Vi= — 3.0V Min. for pulse width less than 50ns. — 265 -

SHE D MM 8382383 0004758 772 MSONY SONY SONY CORP/COMPONENT PRODS oxxse 1000 /M T-46-23-14

Electrical Characteristics

¢ DC characteristics (Voc=5V + 10%, GND=OV, Ta=0 to +70°C) symbol Test condi = TOLAALASL |- TOLUAZLUASLY mi conditions nit Input leakage fa toe [oe CET=Vin or CE2=Vit or Output leakage OE=Vin or WE=Vit uA curr Wuo=GND to Voc CET =Vu, CE2=Vin | | Operating power Viw=Vin or Vit —!7 7 | 15 |ma supply current lourmoma | | Average operating fed tine | ue 10 current lounOmA lees | CET S0.2V, mA CE2 2 Voc — 0.2V } Vu $ 0.2V, Read cycle 5 | 40 Vin & Voc ~ 0.2V | standby curer oy GE1e vero [00% | —[—| m0 |—|—] CEE Vor 02V Tz [—T 2 [a | [ie [CERnorcem | [3 [ma] Output high -- voltage Vou — | lon=— 1.0mA v emer ve wine a * Voc=5V, Ta=25°C 1/0 capacitance (Ta=25°C , f=1MHz) FS [epateapactance [Ow [varov |—|—| 6 | oF | Note) This parameter is sampled and is not 100% tested. - 266 -

SUE D M@™@ 8382383 0004759 £09 MBSONY SONY _ sony CoRP/COMPONENT PRODS exKS10008/14 AC characteristics T-46-23-14 @ AC test conditions (Vec=5V + 10%, Ta=0 to +70°C) ¢ Test circuit * C1includes scope and jig capacitances. — 267 -

SUE D MM 8382383 0004760 320 MMSONY SONY SONY CORP/COMPONENT PRODS _______exxsetooonw T-46-23-14 © Read cycle (WE="H") ss [ win. | Max | Min. [ Max. | Min. | | Address access ime tw | — T100 | — | v0 | — [50 | | Chip enable access time (CEN) | teox | — | 100 | — [120 | —T 150 | re | | Chipenabie accesstime(Ce2) | tesa | — | 100 | — | 20 | — [150 [as | [Oupwenadietoouputvaid [toe | — [50 | — | 60 | — | 70 | os | | Outbuthoidtrom address change tow | ts | — | 8 | — | a8 | — | ne | [ OuputenabletooutputiniowZ OE) tar | 5 | — | s [—— 5 | — | ne | LOuputdisableto outputinhighZ (OE) [towe* | — | 36 | —] 40 | — [50 ne | ™ tyzs, bize and tonz are defined as the time required for outputs to turn to high impedance state and are not referred to as output voltage levels. e Write cycle | wetecycietime [tw | 00 | 120 | — | 150 | Ts | | Address vaidtoend otwrte fw [70 | — [a5 | — | 400 | — ns | [ Chipenabietoendofwite tow | 70 | — [as | — | 400 [ — [ns | | Datatowrtetimeoverap tow [40 | — | 50 | — | 60 | — | ns | | Datahold tomwrtetime toe [0 | To | To [Tr | [ Write pusewiatn tw 70 | — [0 | — [90 | Tr | | Address sotuptime ws To | To |] 0 [Jos] | Witerecoverytime WE) [tw | 0 | fo [To | — Je | | Wie recovery time (CEV.CE2) [wm | 0 [— [0 |— | 0 [Tne | | Output active omendofwite [tow P10 | — 10 [ — | x0 | — [rs | [WitetoouputinnignZ [we | — | 30 | — J a0 [ — [30 | ns | * twuz is defined as the time required for outputs to tum to high impedance state and is not referred to as output voltage level. a - 268 -—

S4E D MM 8382383 OOO47b1 2b7 MSONY SONY SONY CORP/COMPONENT PRODS exxsor000" 7 Timing Waveform -46-23- © Read cycle (1) : CET=OE=Vir, CE2=Vin, WE=Vin T-46-23-14 outa out Provoun date vabd k : = Ou vid ao AAA ALLL wen MM = P] EP = mai ALLL A el = 1 one out Doro vas © Write cycle (1) : WE contro! i = ANYANSNANAANYNS er a ote LY. FeNEN on we j —— tos = a CBB 259252y KS Gate out LDP ‘High impedence. Zee oy Cry ee =, - 269 -

S4E D MM 8382383 OOO4?7b2 1T3 BSONY SONY SONY CORP/COMPONENT PRODS ‘OXK581000P,7M - T-46-23-14 @ Write cycle (2) : CET control we ce2 ee wz an Oma out OOO ee @ Write cycle (3) : CE2 control , ees VANS LZ ce , we ama out High impedance Note) . ‘ *1, Write is executed when both ET and WE are at low and CE2is at high simultaneously. *2, Do not apply the data input valtage of the opposite phase to the output while I/O pin is in output condition. *3. twat is tested from either the rising edge of CET or the falling edge of CE2, whichever comes earlier, until the end of the write cycle. = 270 -

SHE D MM 8382383 00047643 O3T MMSONY SONY SONY CORP/COMPONENT PRODS (ox«581000°.7M T-46-23-14 Data Retention Characteristics (Ta=0 to 70°C ) - - = TOLM2U15L = AOLL2LL/15LL | tem Symbol Test conditions + | Unit Data retention * Data retention: | lecoat | Voo=3.0v*? — [oto4ore_ | — | [ 10 | —| [24 |ua current ssc | —| 4 [4 [J 0a Pie) Data retention Chip disable to data retention Recovery tne | [ne*#} — | — [oe] [ne] Note) #1, CET 2 Voc — 0.2V, CE2 = Voc ~ 0.2V (CET control) or CE2 5 0.2V (CE2 control) *2. tac: Read cycle time . Data retention waveform © Low supply voltage data retention waveform (1) (CE1 control) ~ toons Data retention mode te 4.5V ---+ Worrorr cena sen cnnncenecc eee cafe on sede one nse! CE CHa va02v GND--n-22- no wane nnnewsmnnnmmnnnnnnn manne entin ewan mae manne © Low supply voltage data retention waveform (2) (CE2 control) ‘ Data retention mode Vee

4 SVronr mon one (nn noone ann nen

i eS " = 271 -

SUE D Ml 8382383 0004764 T?b MMSONY SONY SONY CORP/COMPONENT PRODS oxen T-46-23-14 Example of Represeutative Characteristics Supply current vs. Supply voltage Supply current vs. Ambient temperature 3° 3" Eee eee Bim LA a e(tt{t er é(i{ tt ttt RECEDES | Seer ~ a pereyy tt | j Pe 9. [het [TTT | Poet TT TT TY RECEEH TE .EEPEPEIE Voc — Supply voltage (V) Ta — Ambient temperature (°C) Supply current vs, Frequency 3 Access time vs. Load capacity mee pe _now F THe TD Zon Le ee gw 7 Poo PILL | pote PTT VA np Zenneee yu oa ' Fy a4nnee Ta=250 3 " Ta= 25°C LTE TT TI : Frequency (1/tac, 1/twc) (MHz) C.—Load capacity (PF) 3 Access time vs. Supply voltage 7 Access time vs. Ambient temperature » LITT TT TT et] TT TTT {I git tit iti ty Bf ttittt POCCCOCE “Cece ppesheeee) COP eee th \\ PT tt Pees \\ LET [rete | ga TTT Pitt am a A Voc ~ Supply voltage (V) r Ta— Ambient temperature (°C) = 272 -

S4E D MM 8382383 D0047L5 902 MSONY SONY SONY CORP/ COMPONENT PRODS rer T-46-23-14 ‘Standby current vs. Supply voltage ‘Standby current vs. Ambient temperature MOOOLOLTTY POTD Oooo Pee Pe 1 i 2 4 Pooper BLT] ys | | Pore Peete EA +.OOT 4nnn . co Suophy votage © . ta ambient ‘emperatre (6) “ Input voltage level vs. Supply voltage Standby current vs. Ambient temperature OOOO eCLLLELE ? CCEEEL Le ACCC i SaeenRee PCOCccoe PCC er eestor Poca PCPCREEL p.CLELELCT I PCCCeCe : Seeees=e 7A 2.COLLE AC . vee = suo votage o . Ta- Ambient temperature (°C) Output current va. Output voltage Output current vs. Output voltage » CLE ,LLIILIL iO eee POT POCO ) COCO ® CORCECCo 20800408 PCCPROCET POCO PCOONTC PCOOZTT ‘ CON ee ‘ Oe LTE yk aeane Vox — Output voltage (V) Vow — Output voltage (V) — 273 -

SHE D MM 8382383 OOO47bb 849 MMSONY SONY SONY CORP/COMPONENT PRODS caxse1000° 74 Package Outline = Unit: mm T-46-23-14 CXK581000P 32Pin DIP (Plastic) 600mil 4.59 ao2tht BI Ibe oo panne nii =| SS} o*- 15° 254 zis Fi a) “Q) ee | IMMA AAA MAAAAAA AAA AAAGL 204} z 65 3 1.22015] | [vevec cope ——— J CXK581000M —32Pin SOP (Plastic) 525mil 1.29 205!8t 218 | al | bs =A | TOOUOROOOHO EOD 4 1 16 ote 3 Tony 0° -1Q) [vevec covet - 214 -