CXDM1002N CENTRAL | Alldatasheet

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DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS 20 V Continuous Drain Current (Steady State) I D 2.0 A Maximum Pulsed Drain Current, tp=10μs I DM 7.0 A Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=20V, VDS=0 100 nA IDSS V DS=100V, VGS=0 100 nA BVDSS V GS=0, ID=250μA 100 V VGS(th) VGS=VDS, ID=250μA 1.5 2.1 2.5 V VSD VGS=0, IS=1.0A 1.1 V rDS(ON) V GS=10V, ID=2.0A 125 300 mΩ rDS(ON) V GS=4.5V, ID=1.0A 140 350 mΩ Crss V DS=25V, VGS=0, f=1.0MHz 48 pF Ciss V DS=25V, VGS=0, f=1.0MHz 550 pF C oss VDS=25V, VGS=0, f=1.0MHz 45 pF Qg(tot) VDS=80V, VGS=5.0V, ID=2.0A 6.0 nC Qgs VDS=80V, VGS=5.0V, ID=2.0A 1.2 nC Qgd VDS=80V, VGS=5.0V, ID=2.0A 3.0 nC ton VDD=50V, VGS=5.0V, ID=3.5A 32 ns toff R G=4.7Ω 50 ns FEATURES:

  • Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
  • High voltage (VDS=100V)
  • Logic level compatibility
  • 2kV ESD protection APPLICATIONS:
  • Load/Power switches
  • Power supply converter circuits
  • Battery powered portable equipment SOT-89 CASE R1 (19-March 2013) www.centralsemi.com

LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION www.centralsemi.com R1 (19-March 2013)

TYPICAL ELECTRICAL CHARACTERISTICS R1 (19-March 2013) www.centralsemi.com