CTS314

CTS314 CTMICRO | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 14

Technical content

Features

 Peak Output Current : IOP = ±1.0A (max)  Threshold Input Current: IFLH = 5 mA (max)  Common mode transient immunity : ±25kV/μs (min）  RoHS and REACH Compliance  Halogen Free Compliance  MSL class 1  Regulatory Approvals  UL - UL1577 (E364000)  VDE - EN60747-5-5(VDE0884-5)  CQC – GB4943.1, GB8898(14001104999)  IEC62368 (FI/41119)

Description

The CTS314 consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices.

Applications

 Isolated IGBT/Power MOSFET gate drive  Industrial Inverter  AC brushless and DC motor drives  Induction Heating Package Outline Schematic Note: Different lead forming options available. See package dimension.

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 2 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Absolute Maximum Ratings TA = 25°C, unless otherwise specified Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Ratings Units Notes VISO Isolation voltage (AC, 1 minute, 40 ~ 60% R.H.) 5000 VRMS 1 TOPR Operating temperature -40 ~ +100 0C TSTG Storage temperature -55 ~ +125 0C TSOL Soldering temperature (For 10 seconds) 260 0C 2 PT Total Power Dissipation 300 mW Emitter IF Forward current 25 mA IFP Peak forward current (50% duty, 1ms P.W) 1 A VR Reverse voltage 5 V Detector PO Output Power dissipation 250 mW VO(PEAK) Peak Output Voltage 35 V 3 IOPH Output High Peak Current 1 A 4 IOPL Output Low Peak Current 1 A 4 VCC Supply voltage 35 V Notes 1. AC for 1 minute, RH = 40 ~ 60%. 2. For 10 second peak 3. The VO(PEAK) voltage CAN NOT BE high than VCC. 4. The IO maximum pulse width = 10 us, maximum duty cycle = 0.2%.

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 3 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler

Electrical Characteristics

Over recommended operating conditions TA = –40 to 100 °C. Typical values are measured at VCC=30V, VEE= GND, TA = 250C (unless otherwise stated) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward Voltage IF = 10mA - 1.4 1.8 V VR Reverse Voltage IR = 10μA 5.0 - - V ΔVF/ΔTA Temperature coefficient of forward voltage IF = 10mA - -1.7 - mV/°C Detector Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes ICCL Logic Low Supply Current IF= 0mA - 1.5 3 mA ICCH Logic High Supply Current IF= 10mA - 1.5 3 Transfer Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VOH High Level Output Voltage IF= 10mA, IO= -100mA VCC – 0.6 VCC – 0.4 - V VOL Low Level Output Voltage IF= 0mA, IO= 100mA - 0.25 0.4 V IOPH High Level Output Current VO= VCC-2V - - -0.3 A VO= VCC-4V - - -0.9 1 IOPL Low Level Output Current VO= VEE+2V 0.3 - - A VO= VEE+4V 0.9 - - 1 IFLH Input Threshold Current IO= 0mA, VO> 5V - 1.4 5.0 mA VFHL Input Threshold Voltage IO= 0mA, VO< 5V 0.8 - - V VUVLO+ Under Voltage Lockout Threshold IO= 10mA, VO> 5V 6.9 7.8 8.7 V VUVLO- IO= 10mA, VO< 5V 5.9 6.7 7.5 V UVLOHYS Under Voltage Lockout Hysteresis - 1.1 - V Notes 1. The IO maximum pulse width = 10 us, maximum duty cycle = 0.2%.

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 4 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Over recommended operating conditions TA = –40 to 100 °C. Typical values are measured at VCC=30V, VEE= GND, TA = 250C(unless otherwise stated) Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TPHL High to Low Propagation Delay Rg = 47Ω, Cg = 3 nF, f = 10 kHz, Duty = 50%, IF = 10mA, VCC = 30V 100 160 300 ns TPLH Low to High Propagation Delay 100 130 300 ns PWD Pulse Width Distortion - 30 - ns PDD Propagation Delay Difference Between Any Two Parts or Channels -100 - 100 ns tr Rise Time - 20 100 ns tf Fall Time - 20 100 ns |CMH| Common Mode Transient High VCC= 30V, TA= 250C, VCM= 1.5kV IF= 7.5mA 25 - - kV/µs |CML| Common Mode Transient Low IF= 0mA 25 - - kV/µs

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 5 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Typical Characteristic Curves TA = 25°C, unless otherwise specified

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 6 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Typical Characteristic Curves TA = 25°C, unless otherwise specified

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 7 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Typical Characteristic Curves TA = 25°C, unless otherwise specified

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 8 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Package Dimension Dimensions in mm unless otherwise stated Surface Mount Lead Forming Forming Option Dimensions in mm unless otherwise stated

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 9 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Marking Information Note: CT : Denotes “CT Micro” 314 : Part Number V : VDE Safety Mark Option (Blank or V) Y : One Digit Year Code WW : Two Digit Work Week K : Manufacturing Code

Ordering Information

CTS314(V)(Y)(Z) CT = Denotes “CT Micro” S314 = Part Number V = VDE Safety Mark Option (Blank or V) Y = Lead Form Option (S or SM) Z = Tape and Reel Option (T1 or T2) Option Description Quantity S(T1) Surface Mount Lead Forming with Option 1 Taping 1500 Units/Reel S(T2) Surface Mount Lead Forming with Option 2 Taping 1500 Units/Reel SM(T1) Surface Mount (Gullwing) Lead Forming with Option 1 Taping 1500 Units/Reel SM(T2) Surface Mount (Gullwing) Lead Forming with Option 2 Taping 1500 Units/Reel Reel Dimension All dimensions are in mm, unless otherwise stated Option S(T1/T2) & SL(T1/T2) Option SLM(T1/T2) CT 314 VYWWK

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 10 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) Option S(T2)

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 11 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Option SM(T1) Option SM(T2)

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 12 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Solderability spec (Follow the JEDEC standard JESD22-B102) Reflow Soldering: Immersed surface, other than the end of pin as cut-surface, must be covered by solder. Solder-Bath: More than 95% of the electrode must be covered with solder. Wave soldering (Follow the JEDEC standard JESD22-A111) One time soldering is recommended within the condition of temperature. Temperature: 260+0/-5˚C. Time: 10 sec. Preheat temperature: 25 to 140˚C. Preheat time: 30 to 80 sec. Iron soldering (Follow the standard MIL-STD 202G, Method 210F) Allow single lead soldering in every single process. One time soldering is recommended. Temperature: 350±10˚C Time: 5 sec max.

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 13 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler Reflow Profile (Follow the JEDEC standard J-STD-020) Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max.

www.ct-micro.com © 2022 CT MICRO INTERNATIONAL CORPORATION Rev.3 ALL RIGHTS RESERVED. Page 14 Nov, 2022 CTS314 1.0A MOSFET/IGBT Gate Driver Optocoupler DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. DISCOLORATION MIGHT OCCUR ON THE PACKAGE SURFACE AFTER SOLDERING, REFLOW OR LONG TERM USE. THIS DOES NOT IMPACT THE PRODUCT PERFORMANCE NOR THE PRODUCT RELIABILITY. CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.