4N29 CTMICRO | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

Features

  • • •• High isolation 5000 VRMS
  • • •• CTR flexibility available see order information
  • • •• DC input with transistor output
  • • •• Temperature range - 55 ° C to 100 ° C
  • • •• Regulatory Approvals /square6 UL - UL1577 (E364000) /square6 VDE - EN60747-5-5(VDE0884-5) /square6 CQC – GB4943.1, GB8898 /square6 IEC60065, IEC60950

Applications

  • • •• Switch mode power supplies
  • • •• Computer peripheral interface
  • • •• Microprocessor system interface

Description

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.

Proprietary & Confidential Page 2 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25 oC Symbol Parameters Ratings Units Notes VISO Isolation voltage 5000 VRMS TOPR Operating temperature -55 ~ +100 0C TSTG Storage temperature -55 ~ +150 0C TSOL Soldering temperature 260 0C Emitter IF Forward current 60 mA IF(TRANS) Peak transient current ( ≤1µs P.W,300pps) 1 A VR Reverse voltage 6 V PD Power dissipation 120 mW Detector PD Power dissipation 150 mW BVCEO Collector-Emitter Breakdown Voltage 55 V BVCBO Collector-Base Breakdown Voltage 55 V BVECO Emitter-Collector Breakdown Voltage 7 V BVEBO Emitter-Base Breakdown Voltage 7 V

Proprietary & Confidential Page 3 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Electrical Characteristics TA = 25° C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward voltage I F=10mA 1.24 1.4 V VF Forward voltage H11B3 I F=50mA 1.45 1.5 V IR Reverse Current V R = 6V - - 5 µ A CIN Input Capacitance f= 1MHz - 45 - pF Detector Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVCEO Collector-Emitter Breakdown IC= 100 µ A 55 - - V BVECO Emitter-Collector Breakdown IE= 100 µ A 7 - - V BVCBO Collector-Base Breakdown IC= 100 µ A 55 - - V ICEO Collector-Emitter Dark Current V CE = 10V, I F=0mA - - 100 nA Transfer Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CTR Current Transfer Ratio 4N29, 4N30 IF= 10mA, V CE = 10V 100 - - 4N31 50 - - 4N32, 4N33 500 - - H11B1 IF= 1mA, V CE = 10V 500 - - H11B2 200 - - H11B3 100 - - H11B255 I F= 10mA, V CE = 5V 100 - - TIL113 I F= 10mA, V CE = 1V 300 - - VCE(SAT) Collector- Emitter Saturation Voltage 4N29, 4N30, 4N32, 4N33 I F= 8mA, I C= 2mA - - 1.0 V 4N31, TIL113 I F= 8mA, I C= 2mA - - 1.2 H11B1, H11B2, H11B3 I F= 1mA, I C= 1mA - - 1.0 H11B255 I F=50mA, I C= 50mA - - 1.0 RIO Isolation Resistance V IO = 500V DC 1x10 11 /uni2126 CIO Isolation Capacitance f= 1Mhz 0.25 pF

Proprietary & Confidential Page 4 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TON Turn On Time 4N29, 4N30, 4N31, 4N32, 4N33, TIL113 I F= 200mA, Ic= 50mA, R L= 100 /uni2126 - - 4.7 µ s H11B1, H11B2, H11B3, H11B255 IF= 10mA, V CE = 10V, R L= 100 /uni2126 - 24 - TOFF Turn Off Time 4N29, 4N30, 4N31 I F= 200mA, I c= 50mA, R L= 100 /uni2126 - - 30 µ s 4N32, 4N33, TIL113 - - 90 H11B1, H11B2, H11B3, H11B255 IF= 10mA, V CE = 10V, R L= 100 /uni2126 - 17 -

Proprietary & Confidential Page 5 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Typical Characteristic Curves

Proprietary & Confidential Page 6 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler

Proprietary & Confidential Page 7 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Package Dimension Dimensions in mm unless otherwise stated Standard DIP – Through Hole Wide Lead Forming – Through Hole (M Type)

Proprietary & Confidential Page 8 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Surface Mount Forming (S Type) Surface Mount Forming (Low Profile) (SL Type)

Proprietary & Confidential Page 9 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Recommended Solder Mask Dimensions in mm unless otherwise stated Marking Information Note: CT : Denotes “CT Micro” 4N29 : Part Number Y : Fiscal Year WW : Work Week K : Manufacturing Code CT 4N29 YWWK

Proprietary & Confidential Page 10 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler

Ordering Information

4N2X(Y)(Z)-G, 4N3X(Y)(Z)-G, H11BX(Y)(Z)-G, TIL113(Y)(Z)-G X = (9 for 4N2X), (0,1,2,3 for 4N3X series), (1,2,3,255 for H11BX series) Y = Lead form option (S, SL, M or none) Z = Tape and reel option (T1, T2 or none) G= Material option (G: Green, None: Non-green) Option Description Quantity None Standard 6 Pin Dip 65Units/Tube M Wide Lead Forming 65Units/Tube S(T1) Surface Mount Lead Forming – With Option 1 Ta ping 1000 Units/Reel S(T2) Surface Mount Lead Forming – With Option 2 Ta ping 1000 Units/Reel SL(T1) Surface Mount Lead Forming(Low Profile) – Wi th Option 1 Taping 1000 Units/Reel SL(T2) Surface Mount Lead Forming(Low Profile) – Wi th Option 2 Taping 1000 Units/Reel

Proprietary & Confidential Page 11 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Carrier Tape Specifications Dimensions in mm unless otherwise stated Option S(T1) & SL(T1) Option S(T2) & SL(T2)

Proprietary & Confidential Page 12 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150° C Temperature Max. (Tsmax) 200° C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (t L to tP) 3° C/second max. Liquidous Temperature (T L) 217° C Time (t L) Maintained Above (T L) 60 – 150 seconds Peak Body Package Temperature 260° C +0° C / -5° C Time (t P) within 5° C of 260° C 30 seconds Ramp-down Rate (T P to T L) 6° C/second max Time 25° C to Peak Temperature 8 minutes max.

Proprietary & Confidential Page 13 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler DISCLAIMER CT MICROELECTRONICS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIBILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.