CTLT853-M833 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 200 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 6.0 A Power Dissipation (Note 1) P D 4.5 W Power Dissipation (Note 2) P D 4.0 W Power Dissipation (Note 3) P D 2.5 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 27.78 °C/W Thermal Resistance (Note 2) ΘJA 31.25 °C/W Thermal Resistance (Note 3) ΘJA 50.00 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO V CB=150V 10 nA ICBO V CB=150V, TA=100°C 1.0 μA ICER V CE=150V, RBE≤1.0kΩ 10 nA IEBO V EB=6.0V 10 nA BVCBO I C=100μA 200 220 V BVCER I C=10mA, RBE≤1.0kΩ 200 210 V BVCEO I C=10mA 100 110 V BVEBO I E=100μA 6.0 8.0 V VCE(SAT) I C=100mA, IB=5.0mA 22 50 mV VCE(SAT) I C=2.0A, IB=100mA 135 170 mV VCE(SAT) I C=5.0A, IB=500mA 340 mV VBE(SAT) I C=5.0A, IB=500mA 1.25 V CTLT853-M833 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80% smaller than a comparible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices. MARKING CODE: CHA3
- PNP Complement: CTLT953-M833 FEATURES:
- High Voltage (200V) • High Thermal Efficiency
- High Current (IC=6.0A) • 3 x 3mm TLM™ case
- Low VCE(SAT) = 340mV MAX @ 5.0A Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm 2 TLM833 CASE R1 (17-February 2010) www.centralsemi.com
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hFE V CE=2.0V, IC=10mA 100 hFE V CE=2.0V, IC=2.0A 100 200 300 hFE V CE=2.0V, IC=4.0A 50 100 hFE V CE=2.0V, IC=10A 20 30 fT V CE=10V, IC=100mA, f=50MHz 190 MHz Cob V CB=10V, IE=0, f=1.0MHz 38 pF TLM833 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 5) Collector 2) Emitter 6) Collector 3) Base 7) Collector 4) N.C. 8) Collector MARKING CODE: CHA3 REQUIRED MOUNTING PADS (Dimensions in mm) Failure to use this mouning pad layout may result in damage to device. www.centralsemi.com R1 (17-February 2010)