CTLSH10-60M856_15 CENTRAL | Alldatasheet
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Technical content
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 60 V DC Blocking Voltage V R 60 V Average Forward Current I O 10 A Peak Forward Surge Current, tp=8.3ms I FSM 250 A Power Dissipation P D 7.0 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJL 5.0 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR V R=60V 75 500 μA IR V R=60V, TA=100°C 50 mA BVR I R=0.4mA 60 V VF I F=5.0A 0.49 V VF I F=10A 0.59 0.67 V CTLSH10-60M856 SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH10-60M856 is a high performance 10 amp silicon Schottky rectifier with exceptional energy efficiency. This low profile device was designed for space constrained applications, such as a by-pass diode for solar panels. MARKING CODE: CSH1060 APPLICATIONS:
- Solar panel by-pass diode
- OR-ing diode
- Reverse polarity protection FEATURES:
- Low forward voltage, VF=0.59V TYP @ 10A
- Low reverse leakage current, IR=75μA TYP @ 60V
- Low profile 1.0mm MAX package height TLM856 CASE R3 (23-August 2012) www.centralsemi.com
SILICON SCHOTTKY RECTIFIER TLM856 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode 5) Cathode 2) Anode 6) Cathode 3) Anode 7) Cathode 4) N/C 8) Cathode MARKING CODE: CSH1060 SUGGESTED MOUNTING PADS (Dimensions in mm) www.centralsemi.com R3 (23-August 2012)