CTLM7110-M832D CENTRAL | Alldatasheet

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Technical content

MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM7110- M832D consists of an N-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. MARKING CODE: CFL MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL UNITS Power Dissipation (Note 1) P D 1.65 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 76 °C/W MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS 8.0 V Continuous Drain Current (Steady State) I D 1.0 A Maximum Pulsed Drain Current, tp=10μs I DM 4.0 A MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 1.0 A Peak Repetitive Forward Current, tp<1.0ms I FRM 3.5 A Peak Forward Surge Current, tp=8.0ms I FSM 10 A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=8.0V, VDS=0 10 μA IDSS V DS=20V, VGS=0 10 μA BVDSS V GS=0, ID=250μA 20 V VGS(th) VDS=10V, ID=1.0mA 0.5 1.2 V VSD VGS=0, IS=1.0A 1.1 V rDS(ON) V GS=4.5V, ID=0.5A 0.075 0.10 Ω rDS(ON) V GS rDS(ON) V GS=1.5V, ID=0.1A 0.17 0.25 Ω Qg(tot) V DS=10V, VGS=4.5V, ID=1.0A 2.4 nC Qgs V DS=10V, VGS=4.5V, ID=1.0A 0.25 nC Qgd V DS=10V, VGS=4.5V, ID=1.0A 0.65 nC gFS V DS=10V, ID=0.5A 4.2 S

APPLICATIONS

  • Load Power Switches
  • DC - DC Converters
  • LCD Backlighting
  • Battery powered portable devices including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc.

FEATURES

 Dual Chip Device  High Current (1.0A) MOSFET and Schottky Rectifier  Low rDS(ON): 0.25Ω MAX @ VGS=1.5V  Low VF Schottky Rectifier (550mV @ 1.0A MAX)  ESD Protection up to 2KV  Small TLM 3x2mm Leadless Surface Mount Package  Complementary Device: CTLM8110-M832D Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm 2. TLM832D CASE R2 (2-August 2011) www.centralsemi.com

  • Device is Halogen Free by design

MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Crss V DS=10V, VGS=0, f=1.0MHz 45 pF Ciss V DS=10V, VGS=0, f=1.0MHz 220 pF Coss VDS=10V, VGS=0, f=1.0MHz 120 pF ton VDD=10V, VGS=5.0V, ID=0.5A 25 ns toff VDD=10V, VGS=5.0V, ID=0.5A 140 ns ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR V R=5.0V 10 μA IR V R=8.0V 20 μA IR V R=15V 50 μA BVR I R=100μA 40 V VF I F=10mA 0.29 V VF I F=100mA 0.36 V VF I F=500mA 0.45 V VF I F=1.0A 0.55 V CJ V R=4.0V, f=1.0MHz 50 pF TLM832D CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS For Maximum Power Dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details LEAD CODE: 1) Gate Q1 2) Source Q1 3) Anode D1 4) Anode D1 5) Cathode D1 6) Cathode D1 7) Drain Q1 8) Drain Q1 MARKING CODE: CFL PIN CONFIGURATION * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 www.centralsemi.com R2 (2-August 2011)