CTLM3410-M832D CENTRAL | Alldatasheet
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Technical content
DUAL, LOW VCE (SAT) SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410- M832D (Dual NPN), CTLM7410-M832D (Dual PNP), and CTLM3474-M832D (Complementary NPN & PNP) are Low VCE(SAT) Transistors packaged in the small, thermally efficient, 3x2mm Tiny Leadless Module (TLM™) surface mount case. These devices are designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 1.0 A Power Dissipation (Note 1) P D 1.65 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 76 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TYP SYMBOL TEST CONDITIONS MIN NPN PNP MAX UNITS ICBO V CB=40V 100 nA IEBO V EB=6.0V 100 nA BVCBO I C=100μA 40 V BVCEO I C=10mA 25 V BVEBO I E=100μA 6.0 V VCE(SAT) I C=50mA, IB=5.0mA 20 25 50 mV VCE(SAT) I C=100mA, IB=10mA 35 40 75 mV MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ
APPLICATIONS
Switching Circuits DC / DC Converters LCD Backlighting Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc.
FEATURES
Dual Chip Device High Current (1.0A) Transistors Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX) High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area) Small TLM 3x2mm Leadless Surface Mount Package Complementary Devices Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm 2. TLM832D CASE R2 (19-February 2010) www.centralsemi.com
DUAL, LOW VCE (SAT) SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) TYP SYMBOL TEST CONDITIONS MIN NPN PNP MAX UNITS VCE(SAT) I C=200mA, IB=20mA 75 80 150 mV VCE(SAT) I C=500mA, IB=50mA 130 150 250 mV VCE(SAT) I C=800mA, IB=80mA 200 220 400 mV VCE(SAT) I C=1.0A, IB=100mA 250 275 450 mV VBE(SAT) I C=800mA, IB=80mA 1.1 V VBE(ON) V CE=1.0V, IC=10mA 0.9 V hFE V CE=1.0V, IC=10mA 100 hFE V CE=1.0V, IC=100mA 100 300 hFE V CE=1.0V, IC=500mA 100 hFE V CE=1.0V, IC=1.0A 50 fT V CE=10V, IC=50mA, f=100MHz 100 MHz Cob V CB=10V, IE=0, f=1.0MHz (CTLM3410-M832D) 10 pF Cob V CB=10V, IE=0, f=1.0MHz (CTLM7410-M832D) 15 pF TLM832D CASE - MECHANICAL OUTLINE LEAD CODES: 1) Base Q1 2) Emitter Q1 3) Base Q2 4) Emitter Q2 5) Collector Q2 6) Collector Q2 7) Collector Q1 8) Collector Q1 CTLM3410-M832D Dual NPN Marking Code: CFG CTLM7410-M832D Dual PNP Marking Code: CFH CTLM3474-M832D Complementary NPN & PNP Marking Code: CFJ * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 www.centralsemi.com R2 (19-February 2010)