CTLM1034-M832D

CTLM1034-M832D CENTRAL | Alldatasheet

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Technical content

MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL UNITS Power Dissipation* P D 1.65 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 76 °C/W MAXIMUM RATINGS Q1: (TA=25°C) Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 1.0 A MAXIMUM RATINGS D1: (TA=25°C) Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 1.0 A Peak Repetitive Forward Current, tp<1ms I FRM 3.5 A Forward Surge Current, tp=8ms I FSM 10 A ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=40V 100 nA IEBO VEB=6.0V 100 nA BVCBO IC=100μA 40 V BVCEO IC=10mA 25 V BVEBO IE=100μA 6.0 V VCE(SAT) IC=50mA, IB=5.0mA 20 50 mV VCE(SAT) IC=100mA, IB=10mA 35 75 mV CTLM1034-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER TLM832D CASE Central Semiconductor Corp. TM R1 (22-July 2008) MARKING CODE: CFC TM Bottom ViewTop View

APPLICATIONS

• Switching Circuits
• DC / DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment applications including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. DESCRIPTION: The Central Semiconductor Corp. CTLM1034-M832D consists of a Low V CE (SAT) NPN Transistor and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. Due to its leadless package design this device is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages.

FEATURES

• Dual Chip Device
• High Current (1.0A) Transistor and Schottky Rectifier
• Low VCE(SAT) NPN Transistor (450mV @ IC = 1.0A Max)
• Low VF Schottky Rectifier (550mV @ 1.0A Max)
• High Power to Footprint Ratio of 275mW per sq mm (Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Device CTLM1074-M832D *FR-4 Epoxy PCB with copper mounting pad area of 54mm 2

Semiconductor Corp. TM CTLM1034-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER R1 (22-July 2008) ELECTRICAL CHARACTERISTICS Q1 (Continued): SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VCE(SAT) IC=200mA, IB=20mA 75 150 mV VCE(SAT) IC=500mA, IB=50mA 130 250 mV VCE(SAT) IC=800mA, IB=80mA 200 400 mV VCE(SAT) IC=1.0A, IB=100mA 250 450 mV VBE(SAT) IC=800mA, IB=80mA 1.1 V VBE(ON) VCE=1.0V, IC=10mA 0.9 V hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 300 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 MHz Cob VCB=10V, IE=0, f=1.0MHz 10 pF ELECTRICAL CHARACTERISTICS D1: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR= 5V 10 μA IR VR= 8V 20 μA IR V R= 15V 50 μA BVR IR= 100μA 40 V VF IF= 10mA 0.29 V VF IF= 100mA 0.36 V VF IF= 500mA 0.45 V VF IF= 1.0A 0.55 V CJ VR= 4.0V, f=1.0MHz 50 pF TLM832D - MECHANICAL OUTLINE Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details LEAD CODE: 1) BASE Q1 2) EMITTER Q1 3) ANODE D1 4) ANODE D1 5) CATHODE D1 6) CATHODE D1 7) COLLECTOR Q1 8) COLLECTOR Q1 MARKING CODE: CFC