CTLDM303N-M832DS_15 CENTRAL | Alldatasheet

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Technical content

MARKING CODE: C330 APPLICATIONS:

  • DC-DC converters
  • Drive circuits
  • Power management Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm 2 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS 12 V Continuous Drain Current (Steady State) I D 3.6 A Maximum Pulsed Drain Current, tp=10μs I DM 14.4 A Power Dissipation P D 1.65 W Operating and Storage Junction Temperature T J, Tstg -55 to +150 °C Thermal Resistance (Note 1) ΘJA 76 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=12V, VDS=0 10 μA IDSS V DS=20V, VGS=0 1.0 μA BVDSS V GS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 0.6 1.2 V rDS(ON) V GS=4.5V, ID=1.8A 0.033 0.04 Ω rDS(ON) V GS=2.5V, ID=1.8A 0.042 0.078 Ω Qg(tot) VDD=10V, VGS=4.5V, ID=3.6A 5.0 13 nC Qgs VDD=10V, VGS=4.5V, ID=3.6A 0.9 1.4 nC Qgd VDD=10V, VGS=4.5V, ID=3.6A 1.0 2.7 nC gFS V DS=5.0V, ID=3.6A 11.8 S Crss V DS=10V, VGS=0, f=1.0MHz 55 pF Ciss V DS=10V, VGS=0, f=1.0MHz 590 pF Coss VDS=10V, VGS=0, f=1.0MHz 50 pF ton VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω 15 ns toff VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω 29 ns FEATURES:
  • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
  • High current (ID=3.6A)
  • Low gate charge CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE www.centralsemi.com R2 (8-October 2012)

TLM832DS CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 5) Drain Q2 2) Source Q1 6) Drain Q2 3) Gate Q2 7) Drain Q1 4) Source Q2 8) Drain Q1 MARKING CODE: C330 PIN CONFIGURATION www.centralsemi.com R2 (8-October 2012)